APTM10DSKM09T3G Microsemi Power Products Group, APTM10DSKM09T3G Datasheet

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APTM10DSKM09T3G

Manufacturer Part Number
APTM10DSKM09T3G
Description
MOSFET MOD DUAL BUCK CHOPPER SP3
Manufacturer
Microsemi Power Products Group
Datasheet

Specifications of APTM10DSKM09T3G

Fet Type
2 N-Channel (Dual)
Fet Feature
Standard
Rds On (max) @ Id, Vgs
10 mOhm @ 69.5A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
139A
Vgs(th) (max) @ Id
4V @ 2.5mA
Gate Charge (qg) @ Vgs
350nC @ 10V
Input Capacitance (ciss) @ Vds
9875pF @ 25V
Power - Max
390W
Mounting Type
Chassis Mount
Package / Case
SP3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Absolute maximum ratings
All multiple inputs and outputs must be shorted together
* Specification of MOSFET device but output current must be limited to 75A to not exceed a delta of temperature
greater than 30°C for the connectors.
Symbol
R
V
MOSFET Power Module
V
E
E
I
I
P
DSon
I
DM
AR
DSS
AR
AS
D
GS
D
18
19
Dual Buck chopper
29
30
31
32
Example: 13/14 ; 29/30 ; 22/23 …
Drain - Source Breakdown Voltage
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
28 27 26
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
CR1
2
15
Q1
29
3
25
4
30
22
23
13
23 22
14
7
8
7
31
Parameter
R1
8
20
Q2
CR2
32
10
19
18
11 12
16
16
15
14
13
11
10
www.microsemi.com
Application
Features
Benefits
T
T
T
V
R
I
APTM10DSKM09T3G
c
c
c
D
= 25°C
= 80°C
= 25°C
DSS
DSon
= 139A @ Tc = 25°C
AC and DC motor control
Switched Mode Power Supplies
Power MOS V
Kelvin source for easy drive
Very low stray inductance
Internal thermistor for temperature monitoring
High level of integration
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Low profile
Each leg can be easily paralleled to achieve a single
buck of twice the current capability
RoHS Compliant
= 100V
= 9mΩ typ @ Tj = 25°C
-
-
-
-
-
-
Max ratings
Low R
Low input and Miller capacitance
Low gate charge
Avalanche energy rated
Very rugged
Symmetrical design
3000
100 *
100
139
430
±30
390
100
10
50
®
DSon
MOSFETs
Unit
mΩ
mJ
W
V
A
V
A
1 – 6

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APTM10DSKM09T3G Summary of contents

Page 1

... AS * Specification of MOSFET device but output current must be limited to 75A to not exceed a delta of temperature greater than 30°C for the connectors. These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com APTM10DSKM09T3G V = 100V DSS R = 9mΩ typ @ Tj = 25°C ...

Page 2

... Symbol Characteristic V Maximum Peak Repetitive Reverse Voltage RRM I Maximum Reverse Leakage Current Forward Current F V Diode Forward Voltage F t Reverse Recovery Time rr Q Reverse Recovery Charge rr APTM10DSKM09T3G = 25°C unless otherwise specified j Test Conditions T = 25° 0V,V = 100V 125° 0V,V = 80V GS DS ...

Page 3

... Resistance @ 25° 298.15 K 25/  exp B   SP3 Package outline (dimensions in mm See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com APTM10DSKM09T3G Transistor Diode To heatsink R T: Thermistor temperature 25    Thermistor value     −  25 ...

Page 4

... V , Drain to Source Voltage ( Drain Current DS(on) 1.2 Normalized to V =10V @ 69.5A GS 1.1 1 0.9 0 100 I , Drain Current (A) D APTM10DSKM09T3G Single Pulse 0.001 0.01 0.1 rectangular Pulse Duration (Seconds) 120 V DS 100 250µs pulse test @ < 0.5 duty cycle Drain Current vs Case Temperature ...

Page 5

... T , Case Temperature (°C) C Capacitance vs Drain to Source Voltage 100000 Ciss 10000 Coss Crss 1000 100 Drain to Source Voltage (V) DS APTM10DSKM09T3G ON resistance vs Temperature 2.5 V =10V 69.5A 2.0 D 1.5 1.0 0.5 0.0 -50 - Junction Temperature (°C) J Maximum Safe Operating Area 1000 ...

Page 6

... Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APTM10DSKM09T3G 160 V ...

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