APTM10DSKM09T3G Microsemi Power Products Group, APTM10DSKM09T3G Datasheet - Page 6

• Manufacturer Part Number: APTM10DSKM09T3G
• Description: MOSFET MOD DUAL BUCK CHOPPER SP3
• Manufacturer: Microsemi Power Products Group

Specifications of APTM10DSKM09T3G

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 10 mOhm @ 69.5A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 139A
• Vgs(th) (max) @ Id: 4V @ 2.5mA
• Gate Charge (qg) @ Vgs: 350nC @ 10V
• Input Capacitance (ciss) @ Vds: 9875pF @ 25V
• Power - Max: 390W
• Mounting Type: Chassis Mount
• Package / Case: SP3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
120
100
300
250
200
150
100
80
60
40
20
50
0
1.5
0.5
0
25
1
0
0
Operating Frequency vs Drain Current
V
R
T
L=100µH
0
DS
G
J
=125°C
=5Ω
V
R
T
L=100µH
=66V
Switching Energy vs Current
J
DS
G
=125°C
=5Ω
50
=66V
50
Delay Times vs Current
E
50
I
D
on
I
I
D
, Drain Current (A)
D
, Drain Current (A)
, Drain Current (A)
switching
100
Hard
75
100
150
100
150
t
d(off)
E
ZVS
t
V
D=50%
R
T
T
off
d(on)
DS
J
C
G
200
=125°C
ZCS
125
200
=75°C
=5Ω
E
=66V
on
250
250
150
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APTM10DSKM09T3G
1000
100
160
140
120
100
2.5
1.5
0.5
10
80
60
40
20
1
2
1
0
0
0.3
Switching Energy vs Gate Resistance
0
0
Source to Drain Diode Forward Voltage
V
I
T
L=100µH
V
R
T
L=100µH
D
DS
J
J
=139A
V
DS
G
=125°C
=125°C
=5Ω
SD
Rise and Fall times vs Current
=66V
=66V
0.5
10
, Source to Drain Voltage (V)
50
Gate Resistance (Ohms)
T
I
J
D
=150°C
0.7
, Drain Current (A)
20
100
T
0.9
30
J
=25°C
150
E
off
1.1
40
t
t
r
f
200
E
1.3
on
50
250
1.5
60
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