APTM20DAM04G Microsemi Power Products Group, APTM20DAM04G Datasheet

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APTM20DAM04G

Manufacturer Part Number
APTM20DAM04G
Description
MOSFET N-CH 200V 372A SP6
Manufacturer
Microsemi Power Products Group
Datasheet

Specifications of APTM20DAM04G

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
5 mOhm @ 186A, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
372A
Vgs(th) (max) @ Id
5V @ 10mA
Gate Charge (qg) @ Vgs
560nC @ 10V
Input Capacitance (ciss) @ Vds
28900pF @ 25V
Power - Max
1250W
Mounting Type
Chassis Mount
Package / Case
SP6
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Absolute maximum ratings
Symbol
R
V
MOSFET Power Module
V
E
E
I
I
P
DSon
I
DM
AR
DSS
AR
AS
D
GS
D
S2
G2
Drain - Source Breakdown Voltage
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
VBUS
Boost chopper
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
G2
S2
0/VBUS
CR1
Q2
Parameter
VBUS
0/VBUS
OUT
OUT
www.microsemi.com
Application
Features
Benefits
T
T
T
V
R
I
c
c
c
D
= 25°C
= 80°C
= 25°C
DSS
DSon
= 372A @ Tc = 25°C
AC and DC motor control
Switched Mode Power Supplies
Power Factor Correction
Power MOS 7
Kelvin source for easy drive
Very low stray inductance
High level of integration
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Low profile
RoHS Compliant
-
-
-
-
-
-
-
= 200V
= 4mΩ typ @ Tj = 25°C
Low R
Low input and Miller capacitance
Low gate charge
Avalanche energy rated
Very rugged
Symmetrical design
M5 power connectors
APTM20DAM04G
Max ratings
DSon
1488
1250
3000
200
372
278
±30
100
50
®
5
MOSFETs
Unit
mΩ
mJ
W
V
A
V
A
1 – 6

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APTM20DAM04G Summary of contents

Page 1

... Avalanche current (repetitive and non repetitive Repetitive Avalanche Energy AR E Single Pulse Avalanche Energy AS These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com APTM20DAM04G V = 200V DSS R = 4mΩ typ @ Tj = 25°C DSon I = 372A @ Tc = 25°C D Application • ...

Page 2

... Symbol Characteristic V Maximum Peak Repetitive Reverse Voltage RRM I Maximum Reverse Leakage Current Forward Current F V Diode Forward Voltage F t Reverse Recovery Time rr Q Reverse Recovery Charge rr APTM20DAM04G = 25°C unless otherwise specified j Test Conditions T = 25° 0V,V = 200V 0V,V = 160V T = 125° ...

Page 3

... J T Storage Temperature Range STG T Operating Case Temperature C Torque Mounting torque Wt Package Weight SP6 Package outline (dimensions in mm) See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com APTM20DAM04G Min Transistor Diode 2500 -40 -40 -40 To heatsink M6 3 For terminals M5 2 www.microsemi.com ...

Page 4

... V , Drain to Source Voltage ( Drain Current DS(on) 1.2 Normalized to V =10V @ 186A GS 1.1 1 0.9 0.8 0 100 200 300 I , Drain Current (A) D APTM20DAM04G Single Pulse 0.001 0.01 rectangular Pulse Duration (Seconds) 1200 1000 800 9V 8.5V 600 8V 400 7.5V 7V 200 6. Drain Current vs Case Temperature ...

Page 5

... T , Case Temperature (°C) C Capacitance vs Drain to Source Voltage 100000 Ciss Coss 10000 1000 Crss 100 Drain to Source Voltage (V) DS APTM20DAM04G ON resistance vs Temperature 2.5 V =10V 186A 2.0 D 1.5 1.0 0.5 0.0 -50 - Junction Temperature (°C) J Maximum Safe Operating Area 10000 1000 ...

Page 6

... Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APTM20DAM04G 160 V ...

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