APTM20DAM04G Microsemi Power Products Group, APTM20DAM04G Datasheet - Page 6

• Manufacturer Part Number: APTM20DAM04G
• Description: MOSFET N-CH 200V 372A SP6
• Manufacturer: Microsemi Power Products Group

Specifications of APTM20DAM04G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 5 mOhm @ 186A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 372A
• Vgs(th) (max) @ Id: 5V @ 10mA
• Gate Charge (qg) @ Vgs: 560nC @ 10V
• Input Capacitance (ciss) @ Vds: 28900pF @ 25V
• Power - Max: 1250W
• Mounting Type: Chassis Mount
• Package / Case: SP6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
120
100
350
300
250
200
150
100
80
60
40
20
50
0
8
6
4
2
0
0
50
0
0
Operating Frequency vs Drain Current
V
R
T
L=100µH
V
R
T
L=100µH
DS
G
J
J
=125°C
DS
G
=1.2Ω
=125°C
=133V
=1.2Ω
Switching Energy vs Current
100
=133V
100
100
Delay Times vs Current
I
I
D
I
D
D
, Drain Current (A)
, Drain Current (A)
200
200
, Drain Current (A)
150
switching
Hard
E
300
300
200
off
400
400
250
V
D=50%
R
T
T
ZVS
t
E
d(off)
DS
J
C
G
=125°C
off
=75°C
t
=1.2Ω
d(on)
500
500
=133V
300
ZCS
E
on
www.microsemi.com
600
600
350
1000
100
160
140
120
100
10
12
10
80
60
40
20
1
8
6
4
2
0
0.2 0.4 0.6 0.8
Switching Energy vs Gate Resistance
0
0
Source to Drain Diode Forward Voltage
APTM20DAM04G
V
R
T
L=100µH
J
V
DS
G
V
I
T
L=100µH
=125°C
D
=1.2Ω
SD
Rise and Fall times vs Current
J
=133V
DS
=372A
100
=125°C
=133V
2.5
, Source to Drain Voltage (V)
Gate Resistance (Ohms)
T
I
J
D
=150°C
200
, Drain Current (A)
5
T
J
300
=25°C
1
7.5
1.2 1.4 1.6 1.8
400
10
t
t
r
500
f
E
E
off
on
12.5
600
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