APTM120TDU57PG Microsemi Power Products Group, APTM120TDU57PG Datasheet - Page 4

• Manufacturer Part Number: APTM120TDU57PG
• Description: MOSFET MOD TRIPLE DUAL SRC SP6-P
• Manufacturer: Microsemi Power Products Group

Specifications of APTM120TDU57PG

• Fet Type: 6 N-Channel (3-Phase Leg)
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 684 mOhm @ 8.5A, 10V
• Drain To Source Voltage (vdss): 1200V (1.2kV)
• Current - Continuous Drain (id) @ 25° C: 17A
• Vgs(th) (max) @ Id: 5V @ 2.5mA
• Gate Charge (qg) @ Vgs: 187nC @ 10V
• Input Capacitance (ciss) @ Vds: 5155pF @ 25V
• Power - Max: 390W
• Mounting Type: Chassis Mount
• Package / Case: SP6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Performance Curve
0.35
0.25
0.15
0.05
1.4
1.3
1.2
1.1
0.9
0.8
50
40
30
20
10
0.3
0.2
0.1
0
1
0.00001
0
0
0
Low Voltage Output Characteristics
Normalized to
V
GS
V
0.05
=10V @ 8.5A
0.5
0.9
0.7
DS
0.3
0.1
5
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
, Drain to Source Voltage (V)
R
10
DS(on)
I
D
, Drain Current (A)
V
10
GS
vs Drain Current
0.0001
=15, 10 & 8V
15
20
V
GS
=10V
20
V
30
GS
0.001
=20V
rectangular Pulse Duration (Seconds)
25
7V
5.5V
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6.5V
6V
5V
30
40
Single Pulse
0.01
20
16
12
80
70
60
50
40
30
20
10
8
4
0
0
APTM120TDU57PG
25
0
DC Drain Current vs Case Temperature
V
250µs pulse test @ < 0.5 duty cycle
DS
0.1
> I
1
V
GS
D
T
(on)xR
50
Transfert Characteristics
, Gate to Source Voltage (V)
C
2
, Case Temperature (°C)
T
DS
J
=125°C
(on)MAX
3
T
75
J
=25°C
4
1
5
100
6
T
J
=-55°C
125
7
8
10
150
9
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