APTM120TDU57PG Microsemi Power Products Group, APTM120TDU57PG Datasheet - Page 6

• Manufacturer Part Number: APTM120TDU57PG
• Description: MOSFET MOD TRIPLE DUAL SRC SP6-P
• Manufacturer: Microsemi Power Products Group

Specifications of APTM120TDU57PG

• Fet Type: 6 N-Channel (3-Phase Leg)
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 684 mOhm @ 8.5A, 10V
• Drain To Source Voltage (vdss): 1200V (1.2kV)
• Current - Continuous Drain (id) @ 25° C: 17A
• Vgs(th) (max) @ Id: 5V @ 2.5mA
• Gate Charge (qg) @ Vgs: 187nC @ 10V
• Input Capacitance (ciss) @ Vds: 5155pF @ 25V
• Power - Max: 390W
• Mounting Type: Chassis Mount
• Package / Case: SP6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
225
200
175
150
125
100
180
160
140
120
100
2.5
1.5
0.5
75
50
25
80
60
40
20
0
0
3
2
1
0
4
5
5
Operating Frequency vs Drain Current
V
D=50%
R
T
T
V
R
T
L=100µH
V
R
T
L=100µH
DS
J
C
G
DS
G
J
=125°C
=75°C
Switching Energy vs Current
=125°C
=5Ω
DS
G
J
=5Ω
=800V
=125°C
=800V
=5Ω
=800V
10
10
6
Delay Times vs Current
I
I
I
D
D
D
, Drain Current (A)
, Drain Current (A)
, Drain Current (A)
ZCS
15
15
8
switching
Hard
10
20
20
E
12
25
25
on
ZVS
E
t
off
d(on)
t
d(off)
30
30
14
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35
35
16
1000
100
80
60
40
20
10
0
4
3
2
1
0
1
APTM120TDU57PG
0.2 0.4 0.6 0.8
0
5
Source to Drain Diode Forward Voltage
Switching Energy vs Gate Resistance
V
R
T
L=100µH
V
I
T
L=100µH
D
DS
J
G
J
DS
=17A
=125°C
=125°C
=5Ω
V
Rise and Fall times vs Current
=800V
5
=800V
10
SD
T
, Source to Drain Voltage (V)
Gate Resistance (Ohms)
J
=150°C
I
10
D
, Drain Current (A)
15
E
15
off
20
T
1
J
=25°C
20
1.2 1.4 1.6 1.8
25
t
t
f
r
25
E
off
E
on
30
30
35
35
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