IXFN300N10P IXYS, IXFN300N10P Datasheet - Page 2

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IXFN300N10P

Manufacturer Part Number
IXFN300N10P
Description
MOSFET N-CH SOT-227
Manufacturer
IXYS
Series
Polar™r
Datasheet

Specifications of IXFN300N10P

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
5.5 mOhm @ 50A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
295A
Vgs(th) (max) @ Id
5V @ 8mA
Gate Charge (qg) @ Vgs
279nC @ 10V
Input Capacitance (ciss) @ Vds
23000pF @ 25V
Power - Max
1070W
Mounting Type
Chassis Mount
Package / Case
SOT-227, miniBLOC
Vdss, Max, (v)
100
Id(cont), Tc=25°c, (a)
295
Rds(on), Max, Tj=25°c, (?)
0.0055
Ciss, Typ, (pf)
23
Qg, Typ, (nc)
279
Trr, Typ, (ns)
-
Trr, Max, (ns)
200
Pd, (w)
1070
Rthjc, Max, (ºc/w)
0.14
Package Style
SOT-227 B
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXFN300N10P
Manufacturer:
RFMD
Quantity:
5 000
Symbol
(T
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
I
I
V
t
Q
I
Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072
S
SM
RM
d(on)
r
d(off)
f
rr
fs
SD
iss
oss
rss
thJC
thCS
g(on)
gs
gd
RM
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
J
= 25°C, unless otherwise specified)
Test Conditions
V
V
Resistive Switching Times
V
R
V
Test Conditions
V
Repetitive, pulse width limited by T
I
I
V
F
F
GS
R
DS
GS
G
GS
GS
= 150A, -di/dt = 100A/μs
= 100A, V
= 50V
PRELIMINARY TECHNICAL INFORMATION
= 1Ω (External)
= 10V, V
= 0V
= 10V, I
= 10V, V
= 0V, V
GS
D
DS
DS
DS
= 60A, Note 1
= 0V, Note 1
= 0.5 • V
= 25V, f = 1MHz
4,835,592
4,881,106
= 0.5 • V
DSS
4,931,844
5,017,508
5,034,796
DSS
, I
, I
D
D
= 100A
= 150A
5,049,961
5,063,307
5,187,117
(T
JM
J
= 25°C, unless otherwise specified)
5,237,481
5,381,025
5,486,715
Min.
Min.
55
Characteristic Values
Characteristic Values
6100
0.71
Typ.
0.05
Typ.
6,162,665
6,259,123 B1
6,306,728 B1
417
279
107
10
23
36
35
56
25
84
92
0.14
1000
Max.
300
200
1.3
Max.
6,404,065 B1
6,534,343
6,583,505
°C/W
°C/W
nC
nC
nC
μC
nF
pF
pF
ns
ns
ns
ns
ns
A
A
V
S
A
6,683,344
6,710,405 B2 6,759,692
6,710,463
SOT-227B Outline (IXFN)
6,727,585
6,771,478 B2 7,071,537
IXFN300N10P
7,005,734 B2
7,063,975 B2
7,157,338B2

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