IXFN300N10P IXYS, IXFN300N10P Datasheet - Page 3

• Manufacturer Part Number: IXFN300N10P
• Description: MOSFET N-CH SOT-227
• Manufacturer: IXYS
• Series: Polar™r

Specifications of IXFN300N10P

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 5.5 mOhm @ 50A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 295A
• Vgs(th) (max) @ Id: 5V @ 8mA
• Gate Charge (qg) @ Vgs: 279nC @ 10V
• Input Capacitance (ciss) @ Vds: 23000pF @ 25V
• Power - Max: 1070W
• Mounting Type: Chassis Mount
• Package / Case: SOT-227, miniBLOC
• Vdss, Max, (v): 100
• Id(cont), Tc=25°c, (a): 295
• Rds(on), Max, Tj=25°c, (?): 0.0055
• Ciss, Typ, (pf): 23
• Qg, Typ, (nc): 279
• Trr, Typ, (ns): -
• Trr, Max, (ns): 200
• Pd, (w): 1070
• Rthjc, Max, (ºc/w): 0.14
• Package Style: SOT-227 B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

© 2008 IXYS CORPORATION, All rights reserved
120
110
100
350
300
250
200
150
100
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
90
80
70
60
50
40
30
20
10
50
0
0
-50
0.0
-50
Fig. 3. R
V
-25
V
0.4
GS
Fig. 1. Extended Output Characteristics
-25
GS
External Lead Current Limit
= 10V
Fig. 5. Maximum Drain Current vs.
= 15V
10V
0.8
9V
0
DS(on)
vs. Junction Temperature
0
T
T
1.2
J
J
25
Case Temperature
- Degrees Centigrade
- Degrees Centigrade
25
Normalized to I
8V
7V
6V
V
1.6
50
DS
50
@ 25ºC
- Volts
2.0
I
75
D
75
= 300A
2.4
100
100
D
2.8
= 150A Value
125
125
I
3.2
D
150
= 150A
150
3.6
175
175
4.0
200
180
160
140
120
100
300
250
200
150
100
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
80
60
40
20
50
0
0
3.5
0.0
0
Fig. 4. R
V
GS
0.4
4.0
= 10V
50
15V
Fig. 2. Output Characteristics
0.8
DS(on)
4.5
- - - - -
Fig. 6. Input Admittance
100
V
GS
1.2
vs. Drain Current
Normalized to I
5.0
= 15V
I
D
V
V
10V
9V
GS
- Amperes
DS
150
@ 150ºC
1.6
- Volts
- Volts
5.5
IXFN300N10P
2.0
200
5V
T
7V
6V
8V
J
= 150ºC
6.0
- 40ºC
2.4
25ºC
D
250
= 150A Value
6.5
2.8
T
T
J
J
= 175ºC
= 25ºC
300
7.0
3.2
350
7.5
3.6