IXFN32N120 IXYS, IXFN32N120 Datasheet
IXFN32N120
Manufacturer Part Number
IXFN32N120
Description
MOSFET N-CH 1200V 32A SOT-227B
Manufacturer
IXYS
Series
HiPerFET™r
Datasheet
1.IXFN32N120.pdf
(4 pages)
Specifications of IXFN32N120
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
350 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
1200V (1.2kV)
Current - Continuous Drain (id) @ 25° C
32A
Vgs(th) (max) @ Id
5V @ 8mA
Gate Charge (qg) @ Vgs
400nC @ 10V
Input Capacitance (ciss) @ Vds
15900pF @ 25V
Power - Max
780W
Mounting Type
Chassis Mount
Package / Case
SOT-227, miniBLOC
Configuration
Single Dual Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.35 Ohms
Drain-source Breakdown Voltage
1200 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
32 A
Power Dissipation
780 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
1200
Id(cont), Tc=25°c, (a)
32
Rds(on), Max, Tj=25°c, (?)
0.35
Ciss, Typ, (pf)
15900
Qg, Typ, (nc)
400
Trr, Typ, (ns)
-
Trr, Max, (ns)
180
Pd, (w)
780
Rthjc, Max, (ºc/w)
0.16
Package Style
SOT-227B
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXFN32N120
Manufacturer:
IXYS
Quantity:
530
Part Number:
IXFN32N120P
Quantity:
148
HiPerFET
Power MOSFETs
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low t
© 2003 IXYS All rights reserved
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
V
M
Weight
Symbol
V
V
I
I
R
D25
DM
AR
GSS
DSS
JM
AR
J
stg
DSS
DGR
GS
GSM
AS
D
ISOL
DSS
GS(th)
DS(on)
d
T
T
T
T
T
Test Conditions
T
T
Continuous
Transient
I
T
50/60 Hz, RMS
I
Mounting torque
Terminal connection torque
Test Conditions
V
V
V
V
V
V
Pulse test, t ≤ 300 µs,
duty cycle d ≤ 2 %
T
ISOL
S
C
C
C
C
C
J
J
J
GS
DS
GS(th)
DS
GS
GS
C
≤ 150°C, R
≤ I
= 25°C
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C, Chip capability
= 25°C, pulse width limited by T
= 25°C
= 25°C
= 25°C
≤ 1 mA
DM
= 0 V, I
= V
= V
= 0 V
= 10 V, I
TM
= ±30 V
, di/dt ≤ 100 A/µs, V
GS
DSS
, I
D
D
D
= 3 mA
= 8 mA
G
DC
= 0.5 • I
= 2 Ω
, V
DS
t = 1 min
t = 1 s
= 0
D25
GS
= 1 MΩ
DD
T
T
≤ V
(T
Advanced Technical Data
J
J
rr
J
= 25°C
= 125°C
DSS
= 25°C, unless otherwise specified)
,
JM
1200
min.
IXFN 32N120
2.5
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
typ.
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
1200
1200
2500
3000
S
G
±30
±40
128
780
150
32
32
64
15
30
4
max.
±200
0.35
5.0
50
3
D
S
V/ns
mA
mJ
nA
µA
°C
°C
°C
V~
V~
Ω
V
V
W
V
V
A
A
A
V
V
g
J
Features
•
•
•
•
•
•
•
Applications
•
•
•
•
•
Advantages
•
•
•
G = Gate
S = Source
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
miniBLOC, SOT-227 B (IXFN)
International standard package
miniBLOC, with Aluminium nitride
Low R
Rugged polysilicon gate cell
Unclamped Inductive Switching (UIS)
Low package inductance
Fast intrinsic Rectifier
structure
rated
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
Temperature and lighting controls
Easy to mount
Space savings
High power density
isolation
V
I
R
D25
E153432
DSS
DS(on)
DS (on)
G
HDMOS
= 1200V
=
= 0.35Ω Ω Ω Ω Ω
D = Drain
TAB = Drain
S
DS98968B(10/03)
TM
D
32A
process
S
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IXFN32N120 Summary of contents
Page 1
... GSS GS(th DSS DS DSS 0.5 • I DS(on D25 Pulse test, t ≤ 300 µs, duty cycle d ≤ © 2003 IXYS All rights reserved Advanced Technical Data IXFN 32N120 Maximum Ratings 1200 = 1 MΩ 1200 GS ±30 ±40 32 128 ≤ DSS 780 -55 ... +150 150 -55 ...
Page 2
... Pulse test, t ≤ 300 µs, duty cycle d ≤ 25A, -di/dt = 100 A/µ IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: Characteristic Values (T = 25°C, unless otherwise specified) J min. typ. max. ...
Page 3
... Fig. 3. Output Characteris tics @ 125 Deg Fig Norm alized to I DS(on) Value vs 10V 2.4 GS 2.2 2 1.8 1.6 1.4 1 Amperes D © 2003 IXYS All rights reserved V = 10V 10V Volts D25 125º 25º IXFN 32N120 Fig. 2. Exte nded Output Characteris tics @ 10V GS ...
Page 4
... 0.2 0.4 0.6 0 Volts S D Fig. 11. Capacitance 100000 f = 1MHz 10000 1000 C rss 100 Volts D S IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents 4 25ºC J ...