IXFN32N120 IXYS, IXFN32N120 Datasheet - Page 4

• Manufacturer Part Number: IXFN32N120
• Description: MOSFET N-CH 1200V 32A SOT-227B
• Manufacturer: IXYS
• Series: HiPerFET™r

Specifications of IXFN32N120

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 350 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 1200V (1.2kV)
• Current - Continuous Drain (id) @ 25° C: 32A
• Vgs(th) (max) @ Id: 5V @ 8mA
• Gate Charge (qg) @ Vgs: 400nC @ 10V
• Input Capacitance (ciss) @ Vds: 15900pF @ 25V
• Power - Max: 780W
• Mounting Type: Chassis Mount
• Package / Case: SOT-227, miniBLOC
• Configuration: Single Dual Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.35 Ohms
• Drain-source Breakdown Voltage: 1200 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 32 A
• Power Dissipation: 780 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 1200
• Id(cont), Tc=25°c, (a): 32
• Rds(on), Max, Tj=25°c, (?): 0.35
• Ciss, Typ, (pf): 15900
• Qg, Typ, (nc): 400
• Trr, Typ, (ns): -
• Trr, Max, (ns): 180
• Pd, (w): 780
• Rthjc, Max, (ºc/w): 0.16
• Package Style: SOT-227B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
100000
10000
1000
100
100
40
36
32
28
24
20
16
12
90
80
70
60
50
40
30
20
10
8
4
0
0
0.2
3
0
5
0.4
T
f = 1MHz
3.5
J
Fig. 11. Capacitance
Fig. 9. Source Current vs.
Fig. 7. Input Adm ittance
Source-To-Drain Voltage
= 125ºC
10
-40ºC
25ºC
T
0.6
J
= 125ºC
V
V
15
V
4
G S
S D
D S
- Volts
- Volts
0.8
20
- Volts
C rss
C oss
4.5
25
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665
C iss
1
T
J
= 25ºC
30
5
1.2
35
5.5
1.4
40
0.18
0.16
0.14
0.12
0.08
0.06
0.04
0.02
0.1
90
80
70
60
50
40
30
20
10
10
0
0
9
8
7
6
5
4
3
2
1
0
Fig. 12. Maxim um Transient Therm al
0
1
0
T
J
V
I
I
50
D
G
= -40ºC
8
DS
Fig. 8. Transconductance
125ºC
= 16A
= 10mA
25ºC
= 600V
100
Fig. 10. Gate Charge
Pulse Width - milliseconds
16
Q
Resistance
150
10
G
24
I
- nanoCoulombs
D
- Amperes
200 250
32
IXFN 32N120
40
300
100
6,534,343
48
350
56
400
1000
450
64