IXFN40N110P IXYS, IXFN40N110P Datasheet - Page 2

• Manufacturer Part Number: IXFN40N110P
• Description: MOSFET N-CH 1100V 34A SOT-227B
• Manufacturer: IXYS
• Series: Polar™r

Specifications of IXFN40N110P

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 260 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 1100V (1.1kV)
• Current - Continuous Drain (id) @ 25° C: 34A
• Vgs(th) (max) @ Id: 6.5V @ 1mA
• Gate Charge (qg) @ Vgs: 310nC @ 10V
• Input Capacitance (ciss) @ Vds: 19000pF @ 25V
• Power - Max: 890W
• Mounting Type: Chassis Mount
• Package / Case: SOT-227, miniBLOC
• Configuration: Single Dual Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.26 Ohms
• Drain-source Breakdown Voltage: 1100 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 34 A
• Power Dissipation: 890 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 1100
• Id(cont), Tc=25°c, (a): 34
• Rds(on), Max, Tj=25°c, (?): 0.26
• Ciss, Typ, (pf): 19000
• Qg, Typ, (nc): 310
• Trr, Typ, (ns): -
• Trr, Max, (ns): 300
• Pd, (w): 890
• Rthjc, Max, (ºc/w): 0.140
• Package Style: SOT-227B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Symbol
(T
g
R
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
T
I
I
V
t
Q
I
Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
by one or moreof the following U.S. patents: 4,850,072
S
SM
RM
d(on)
r
d(off)
f
rr
fs
J
SD
Gi
iss
oss
rss
thJC
thCS
g(on)
gs
gd
RM
J
= 25°C unless otherwise specified)
= 25°C unless otherwise specified)
I
V
Test Conditions
V
Gate input resistance
V
Resistive Switching Times
V
R
V
V
Repetitive, pulse width limited by T
I
F
F
R
DS
GS
GS
GS
GS
G
= 20A, -di/dt = 100A/μs
= I
= 100V, V
= 0V
= 20V, I
= 10V, V
= 1Ω (External)
= 10V, V
S
= 0V, V
, V
GS
= 0V, Note 1
D
DS
GS
DS
DS
= 20A, Note 1
= 25V, f = 1MHz
= 0V
4,835,592
4,881,106
= 0.5 • V
= 0.5 • V
4,931,844
5,017,508
5,034,796
DSS
DSS
, I
, I
D
D
= 20A
= 20A
5,049,961
5,063,307
5,187,117
JM
5,237,481
5,381,025
5,486,715
Min.
Min.
20
Characteristic Values
Characteristic Values
1070
6,162,665
6,259,123 B1
6,306,728 B1
Typ.
1.65
0.05
Typ.
110
310
142
2.2
16
32
19
46
53
55
54
95
0.14 °C/W
Max.
6,404,065 B1
6,534,343
6,583,505
Max.
160
1.5
300 ns
40
°C/W
nC
nC
nC
μC
nF
pF
pF
ns
ns
ns
ns
Ω
S
A
A
V
A
6,683,344
6,710,405 B2 6,759,692
6,710,463
SOT-227B Outline
6,727,585
6,771,478 B2 7,071,537
IXFN40N110P
7,005,734 B2
7,063,975 B2
7,157,338B2