IXFN40N110P IXYS, IXFN40N110P Datasheet - Page 4

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IXFN40N110P

Manufacturer Part Number
IXFN40N110P
Description
MOSFET N-CH 1100V 34A SOT-227B
Manufacturer
IXYS
Series
Polar™r
Datasheet

Specifications of IXFN40N110P

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
260 mOhm @ 20A, 10V
Drain To Source Voltage (vdss)
1100V (1.1kV)
Current - Continuous Drain (id) @ 25° C
34A
Vgs(th) (max) @ Id
6.5V @ 1mA
Gate Charge (qg) @ Vgs
310nC @ 10V
Input Capacitance (ciss) @ Vds
19000pF @ 25V
Power - Max
890W
Mounting Type
Chassis Mount
Package / Case
SOT-227, miniBLOC
Configuration
Single Dual Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.26 Ohms
Drain-source Breakdown Voltage
1100 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
34 A
Power Dissipation
890 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
1100
Id(cont), Tc=25°c, (a)
34
Rds(on), Max, Tj=25°c, (?)
0.26
Ciss, Typ, (pf)
19000
Qg, Typ, (nc)
310
Trr, Typ, (ns)
-
Trr, Max, (ns)
300
Pd, (w)
890
Rthjc, Max, (ºc/w)
0.140
Package Style
SOT-227B
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXFN40N110P
Manufacturer:
IXYS
Quantity:
1 000
Part Number:
IXFN40N110P
Quantity:
110
IXYS reserves the right to change limits, test conditions, and dimensions.
100,000
10,000
120
110
100
1,000
55
50
45
40
35
30
25
20
15
10
90
80
70
60
50
40
30
20
10
100
5
0
0
10
3.5
0.3
0
0.4
4.0
5
Fig. 9. Forward Voltage Drop of
0.5
f
4.5
= 1 MHz
Fig. 7. Input Admittance
10
Fig. 11. Capacitance
T
0.6
J
= 125ºC
Intrinsic Diode
5.0
V
V
15
V
SD
GS
T
DS
0.7
J
- Volts
= 125ºC
- Volts
- Volts
5.5
- 40ºC
20
25ºC
0.8
6.0
25
0.9
T
J
= 25ºC
6.5
C iss
C oss
C rss
30
1.0
7.0
35
1.1
1.2
7.5
40
1.000
0.100
0.010
0.001
55
50
45
40
35
30
25
20
15
10
16
14
12
10
5
0
8
6
4
2
0
0.0001
0
0
V
I
I
5
50
D
G
DS
Fig. 12. Maximum Transient Thermal
= 20A
= 10mA
= 550V
10
0.001
100
Fig. 8. Transconductance
15
Fig. 10. Gate Charge
Q
150
Pulse Width - Seconds
G
20
I
- NanoCoulombs
D
0.01
Impedance
- Amperes
200
25
T
J
= - 40ºC
30
250
IXFN40N110P
0.1
IXYS REF: F_40N110P(97) 03-28-08-A
35
25ºC
300
125ºC
40
350
1
45
400
50
10
450
55

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