STGIPL14K60 STMicroelectronics, STGIPL14K60 Datasheet - Page 11

• Manufacturer Part Number: STGIPL14K60
• Description: IGBT IPM MODULE 14A 600V 38SDIP
• Manufacturer: STMicroelectronics
• Type: IGBTr

Specifications of STGIPL14K60

• Configuration: 3 Phase
• Current: 14A
• Voltage: 600V
• Voltage - Isolation: 2500VDC
• Package / Case: 38-SDIP Module
• Module Configuration: 3-Phase Bridge
• Transistor Polarity: N Channel
• Dc Collector Current: 15A
• Collector Emitter Voltage Vces: 600V
• Power Dissipation Pd: 44W
• Operating Temperature Range: -40°C To
• Rohs Compliant: Yes
• Collector- Emitter Voltage Vceo Max: 600 V
• Collector-emitter Saturation Voltage: 1.8 V
• Continuous Collector Current At 25 C: 14 A
• Power Dissipation: 35 W
• Maximum Operating Temperature: + 125 C
• Minimum Operating Temperature: - 40 C
• Mounting Style: Through Hole
• Operating Temperature (max): 125C
• Operating Temperature (min): -40C
• Pin Count: 38
• Mounting: Through Hole
• Screening Level: Automotive
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10571-5

STGIPL14K60
Table 11.
1. The direction of input current is out of the IC.
Table 12.
Symbol
Symbol
GBWP
CMRR
t
d_comp
SVR
V
V
V
A
SR
SR
V
V
t
t
I
I
I
I
isd
sd
icm
OH
io
ib
OL
ib
vd
o
io
ol
OPAMP characteristics (V
Sense comparator characteristics (V
Gain bandwidth product
Supply voltage rejection ratio
Input bias current
Open-drain low-level output
voltage
Comparator delay
Slew rate
Shut down to high / low side
driver propagation delay
Comparator triggering to high /
low side driver turn-off
propagation delay
Input offset voltage
Input offset current
Input bias current
Input common mode voltage
range
Low level output voltage
High level output voltage
Output short circuit current
Slew rate
Large signal voltage gain
Common mode rejection ratio
Parameter
Parameter
(1)
CC
V
V
R
R
Source,
V
Sink,
V
V
unity gain
V
R
vs. V
Doc ID 15589 Rev 5
V
I
SD/OD pulled to 5 V through
100 kΩ resistor
C
V
V
Measured applying a voltage
step from 0 V to 3.3 V to pin
CIN
= 15 V)
od
o
ic
ic
id
id
i
L
L
L
CP+
OUT
IN
L
= 1
= 7.5 V
= 10 kΩ to V
= 10 kΩ to GND
= 2 kΩ
= 0 V, V
= 0 V, V
= +1; V
= -1; V
= - 3 mA
= 180 pF; R
= 0 to 3.3 V
i
CC
= 0, V
= 1 V
÷
Test conditions
Test condition
4 V; C
o
CC
o
o
o
boot
= V
= 0 V
= 7.5 V
= 7.5 V
= 15 V)
= V
L
CC
CC
pu
= 100 pF;
CC
= 5 kΩ
,
Min.
Min.
2.5
14
16
50
70
60
55
50
50
0
8
-
-
-
-
Electrical characteristics
Typ.
14.7
Typ.
100
3.8
125
200
75
30
80
12
85
75
70
90
60
4
Max.
Max.
200
150
130
200
250
0.5
40
6
3
V/µsec
MHz
Unit
V/μs
Unit
mV
mV
mA
mA
nA
nA
dB
dB
dB
µA
ns
ns
11/22
V
V
V