VVZB120-12IO2 IXYS, VVZB120-12IO2 Datasheet - Page 2

• Manufacturer Part Number: VVZB120-12IO2
• Description: 3-PHASE BRIDGE RECT 1600V 120A
• Manufacturer: IXYS

Specifications of VVZB120-12IO2

• Structure: Bridge, 3-Phase - SCRs/Diodes - IGBT with Diode
• Number Of Scrs, Diodes: 3 SCRs, 3 Diodes
• Voltage - Off State: 1200V
• Current - Gate Trigger (igt) (max): 100mA
• Current - On State (it (av)) (max): 120A
• Current - Non Rep. Surge 50, 60hz (itsm): 750A @ 50MHz
• Current - Hold (ih) (max): 200mA
• Mounting Type: Chassis Mount
• Package / Case: V2-PAK
• Mounting Style: Screw
• Vrrm, Rect, (v): 1200
• Idav, Rec, (a): 120
• @ Th, Rect, (°c): -
• @ Tc, Rect, (°c): 80
• Vces, Igbt, (v): 1200
• Ic80, Igbt, (a): 100
• Vrrm, Fast Diode, (v): 1200
• If(av), Fast Diode, (a): 27
• Trr, Fast Diode, (ns): 40
• Package Style: V2-Pack
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - On State (it (rms)) (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: Q2367690

Symbol
I
V
V
r
V
I
V
I
I
I
t
t
Q
I
R
R
V
V
I
I
(SCSOA)
RBSOA
C
t
t
E
E
R
R
© 2009 IXYS All rights reserved
R
GT
GD
L
H
RM
GES
CES
V
t
gd
q
d(on)
d(off)
T
F
T0
GT
GD
BR(CES)
GE(th)
SC
on
off
, I
thJC
thJH
ies
thJC
thCH
S
CEsat
, V
D
T
Conditions
V
V
I
For power-loss calculations only
T
V
V
T
T
V
di
T
V
di
T
dv/dt = 10 V/µs; I
per thyristor/diode; sine 120° el.
per thyristor/diode; sine 120° el.
V
I
V
V
V
V
V
R
V
R
V
F
C
VJ
VJ
VJ
VJ
VJ
R
R
D
D
D
D
GS
GE
CE
CE
GE
GE
GE
CE
G
G
G
G
= 100 A
= 4 mA
T
-di/dt = 0.64 A/µs; I
/dt = 0.45 A/µs; I
/dt = 0.45 A/µs; I
= V
= 6 V; t
= V
= ½ V
= 15 Ω; non repetitive
= 15 Ω; Clamped Inductive load; L = 100 µH
= T
= 150°C
VJ
V
V
Inductive load; L = 100 µH
T
= 0 V; I
= V
= V
= 15 V; I
= 15 V; V
= 15 V; V
= 25 V; f = 1 MHz; V
= 6 V;
= 6 V;
= T
= T
= T
= ± 20 V
VJ
CE
GE
= T
RRM
RRM
VJM
CES
CES
= 125°C
= 600 V; I
= 15 V; R
VJM
VJM
VJM
DRM
; V
/V
VJM
/V
G
; T
;
;
; V
C
DRM
= 30 µs
DRM
R
C
= 1 mA
VJ
CE
CE
= 100 V; V
D
= 50 A
; T
= 125°C
T
T
T
T
V
V
= 6 V; R
= 900 V; T
= 1200 V; T
VJ
VJ
VJ
VJ
D
D
VJ
G
C
=
=
T
= 25°C
= -40°C
= 25°C
= -40°C
= 15 Ω
= 50 A
= 150°C
G
G
= 120 A; -di/dt = 10 A/µs
2
2
/
/
= 0.45 A
= 0.45 A
3
3
V
V
GK
T
D
DRM
DRM
/I
GE
=
F
= ∞
VJ
= 0 V
= 50 A
2
VJ
/
3
= 125°C
(T
= 125°C
V
DRM
VJ
= 25°C, unless otherwise specified)
; t
P
= 200 µs
1200
min.
4.5
Characteristic Values
170
680
typ.
0.3
5.7
0.1
11
8
max.
1.47
0.85
0.22 K/W
100 mA
200 mA
450 mA
200 mA
150
500
150
mA
1.5
1.6
0.2
1.3 K/W
6.5
0.2 mA
2.1
10 mA
90
11
10
5 mA
5 mΩ
2
1 K/W
1 mA
K/W
mJ
mJ
µC
nA
nF
µs
µs
µs
ns
ns
V
V
V
V
V
A
V
V
V
A
VVZB 120
20090618a
2 - 4