NTLUS3A40PZTBG ON Semiconductor, NTLUS3A40PZTBG Datasheet
NTLUS3A40PZTBG
Specifications of NTLUS3A40PZTBG
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NTLUS3A40PZTBG Summary of contents
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NTLUS3A40PZ Power MOSFET −20 V, −9.4 A, mCoolt Single P−Channel, ESD, 2.0x2.0x0.65 mm UDFN Package Features • UDFN Package with Exposed Drain Pads for Excellent Thermal Conduction • Low Profile UDFN 2.0x2.0x0.65 mm for Board Space Saving • Lowest RDS(on) ...
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THERMAL RESISTANCE RATINGS Junction-to-Ambient – Steady State (Note 3) Junction-to-Ambient – t ≤ (Note 3) Junction-to-Ambient – Steady State min Pad (Note 4) ELECTRICAL CHARACTERISTICS (T Parameter OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage Drain-to-Source Breakdown Voltage Temperature Coefficient Zero ...
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V 18 −2.5 V −3 −3 −4 −4 0.5 1.0 1.5 2.0 2.5 3.0 −V , DRAIN−TO−SOURCE VOLTAGE (V) DS Figure ...
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C iss 2800 2400 2000 1600 1200 800 C oss 400 C rss −V , DRAIN−TO−SOURCE VOLTAGE (V) DS Figure 7. Capacitance Variation 1000 V = −4 ...
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... DEVICE ORDERING INFORMATION Device NTLUS3A40PZTAG NTLUS3A40PZTBG †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. TYPICAL CHARACTERISTICS V = − Single Pulse T = 25° ...
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... Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303− ...