NTLUS3A40PZTBG ON Semiconductor, NTLUS3A40PZTBG Datasheet - Page 4

• Manufacturer Part Number: NTLUS3A40PZTBG
• Description: T4 20/8 PCH 2X2 UDFN SING
• Manufacturer: ON Semiconductor

Specifications of NTLUS3A40PZTBG

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 29 mOhm @ 6.4A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 4A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 29nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 2600pF @ 15V
• Power - Max: 700mW
• Mounting Type: Surface Mount
• Package / Case: 6-UDFN Exposed Pad
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

4000
3600
3200
2800
2400
2000
1600
1200
1000
0.85
0.75
0.65
0.55
0.45
0.35
0.25
0.15
800
400
100
10
0
1
−50
0
1
C
Figure 9. Resistive Switching Time Variation
V
V
I
D
rss
GS
DD
−25
2
= −4.0 A
−V
= −4.5 V
= −15 V
C
C
DS
Figure 7. Capacitance Variation
T
iss
oss
4
Figure 11. Threshold Voltage
J
, DRAIN−TO−SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE (°C)
0
R
G
6
vs. Gate Resistance
, GATE RESISTANCE (W)
25
8
10
10
50
t
t
d(on)
d(off)
t
t
f
r
12
75
14
TYPICAL CHARACTERISTICS
I
100
D
= −250 mA
V
T
f = 1 MHz
16
GS
J
= 25°C
125
= 0 V
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18
100
150
20
4
5
4
3
2
1
0
0
225
200
175
150
125
100
Q
1.E−05
10
75
50
25
GS
1
0
0.2
Drain−to−Source Voltage vs. Total Charge
Figure 10. Diode Forward Voltage vs. Current
5
Figure 12. Single Pulse Maximum Power
V
DS
Q
−V
Figure 8. Gate−to−Source and
G
Q
SD
0.4
, TOTAL GATE CHARGE (nC)
1.E−03
GD
T
, SOURCE−TO−DRAIN VOLTAGE (V)
10
J
= 125°C
SINGLE PULSE TIME (s)
Q
0.6
Dissipation
15
T
1.E−01
20
0.8
T
J
V
I
T
T
= −55°C
D
DS
J
J
1.E+01
= −4.0 A
= 25°C
= 25°C
25
= −15 V
V
GS
1.0
30
1.E+03
20
16
12
8
4
0
1.2