NTD5862NT4G ON Semiconductor, NTD5862NT4G Datasheet - Page 3

• Manufacturer Part Number: NTD5862NT4G
• Description: NFET 60V 102A 6MOHM DPAK-3
• Manufacturer: ON Semiconductor

Specifications of NTD5862NT4G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 5.7 mOhm @ 45A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 90A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 82nC @ 10V
• Input Capacitance (ciss) @ Vds: 6000pF @ 25V
• Power - Max: 96W
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS non-compliant

0.030
0.025
0.020
0.015
0.010
0.005
0.000
200
160
120
80
40
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0
0
−50
4
T
J
V
= 25°C
I
GS
D
Figure 3. On−Resistance vs. Gate Voltage
Figure 5. On−Resistance Variation with
Figure 1. On−Region Characteristics
−25
= 45 A
V
= 10 V
DS
V
5
GS
1
T
, DRAIN−TO−SOURCE VOLTAGE (V)
V
J
, GATE−TO−SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE (°C)
GS
0
= 10 V
6
25
Temperature
2
7
50
3
75
8
TYPICAL CHARACTERISTICS
100
4
T
I
D
J
9
http://onsemi.com
= 25°C
= 45 A
5.8 V
6.2 V
6.0 V
5.6 V
125
5.2 V
5
10
150
3
100000
10000
0.006
0.005
0.004
0.003
1000
200
180
160
140
120
100
80
60
40
20
0
10
3
10
Figure 6. Drain−to−Source Leakage Current
V
V
V
T
Figure 4. On−Resistance vs. Drain Current
GS
GS
DS
J
20
= 25°C
= 10 V
= 0 V
≥ 5 V
V
T
V
DS
Figure 2. Transfer Characteristics
J
GS
20
= 125°C
, DRAIN−TO−SOURCE VOLTAGE (V)
30
, GATE−TO−SOURCE VOLTAGE (V)
4
I
T
D
J
40
, DRAIN CURRENT (A)
= 25°C
vs. Voltage
30
T
T
J
J
50
= 150°C
= 125°C
5
60
T
J
40
= −55°C
70
6
80
50
90
100
60
7