FDMC8882 Fairchild Semiconductor, FDMC8882 Datasheet

MOSFET N-CH 30V 8-MLP

FDMC8882

Manufacturer Part Number
FDMC8882
Description
MOSFET N-CH 30V 8-MLP
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDMC8882

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
14.3 mOhm @ 10.5A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
10.5A
Vgs(th) (max) @ Id
2.5V @ 250µA
Gate Charge (qg) @ Vgs
20nC @ 10V
Input Capacitance (ciss) @ Vds
945pF @ 15V
Power - Max
2.3W
Mounting Type
Surface Mount
Package / Case
8-MLP, Power33
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDMC8882
Manufacturer:
FA1RCHILD
Quantity:
20 000
Company:
Part Number:
FDMC8882
Quantity:
21 000
©2010 Fairchild Semiconductor Corporation
FDMC8882 Rev.C2
FDMC8882
N-Channel Power Trench
30 V, 16 A, 14.3 m:
Features
„ Max r
„ Max r
„ High performance technology for extremely low r
„ Termination is Lead-free and RoHS Compliant
MOSFET Maximum Ratings
Thermal Characteristics
Package Marking and Ordering Information
V
V
I
P
T
R
R
D
DS
GS
D
J
TJC
TJA
, T
Symbol
Device Marking
STG
FDMC8882
DS(on)
DS(on)
= 14.3 m: at V
= 22.5 m: at V
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Top
GS
GS
MLP 3.3x3.3
FDMC8882
= 10 V, I
= 4.5 V, I
-Continuous
-Continuous (Silicon limited)
-Pulsed
Device
D
D
= 10.5 A
Pin 1
= 8.3 A
T
A
®
= 25 °C unless otherwise noted
DS(on)
S
Parameter
MOSFET
S
S
MLP 3.3x3.3
G
Package
Bottom
1
T
T
T
T
T
General Description
This
Semiconductor’s advanced Power Trench
been especially tailored to minimize the on-state resistance. This
device is well suited for Power Management and load switching
applications common in Notebook Computers and Portable
Battery Packs.
Application
„ High side in DC - DC Buck Converters
„ Notebook battery power management
„ Load switch in Notebook
D
A
C
C
A
C
= 25 °C
= 25 °C
= 25 °C
= 25 °C
D
= 25 °C
D
N-Channel
D
Reel Size
13 ’’
(Note 1a)
(Note 1a)
(Note 1a)
D
D
D
D
MOSFET
8
5
6
7
Tape Width
12 mm
is produced using Fairchild
-55 to +150
Ratings
10.5
±20
6.6
2.3
53
30
16
34
40
18
®
September 2010
process that has
www.fairchildsemi.com
3000 units
Quantity
1
4
3
2
G
S
S
Units
S
°C/W
°C
W
V
V
A

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FDMC8882 Summary of contents

Page 1

... Thermal Resistance, Junction to Case TJC R Thermal Resistance, Junction to Ambient TJA Package Marking and Ordering Information Device Marking Device FDMC8882 FDMC8882 ©2010 Fairchild Semiconductor Corporation FDMC8882 Rev.C2 ® MOSFET General Description = 10.5 A This N-Channel D Semiconductor’s advanced Power Trench = 8 been especially tailored to minimize the on-state resistance. This ...

Page 2

... Reverse Recovery Time rr Q Reverse Recovery Charge rr NOTES determined with the device mounted TJA the user's board design. 2. Pulse Test: Pulse Width < 300 Ps, Duty cycle < 2.0 %. ©2010 Fairchild Semiconductor Corporation FDMC8882 Rev. °C unless otherwise noted J Test Conditions = 250 PA 250 PA, referenced to 25 °C I ...

Page 3

... Junction Temperature 40 P PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 150 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics ©2010 Fairchild Semiconductor Corporation FDMC8882 Rev. °C unless otherwise noted J P PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 100 125 150 0.01 ...

Page 4

... Unclamped Inductive Switching Capability THIS AREA IS LIMITED BY r DS(on) SINGLE PULSE 0 MAX RATED 125 C 0.01 0.01 0 DRAIN to SOURCE VOLTAGE (V) DS Figure 11. Forward Bias Safe Operating Area ©2010 Fairchild Semiconductor Corporation FDMC8882 Rev. °C unless otherwise noted J 1000 = 100 1000 P 100 s 100 100 ...

Page 5

... Typical Characteristics 2 1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.1 0.02 0.01 0.01 SINGLE PULSE R = 125 T JA 0.001 - ©2010 Fairchild Semiconductor Corporation FDMC8882 Rev. °C unless otherwise noted RECTANGULAR PULSE DURATION (sec) Figure 13. Transient Thermal Response Curve NOTES: DUTY FACTOR ...

Page 6

... Dimensional Outline and Pad Layout ©2010 Fairchild Semiconductor Corporation FDMC8882 Rev.C2 6 www.fairchildsemi.com ...

Page 7

... Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©2010 Fairchild Semiconductor Corporation FDMC8882 Rev.C2 Power-SPM™ ® ® PowerTrench SM PowerXS™ Programmable Active Droop™ ® QFET QS™ Quiet Series™ ...

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