FDMC8882 Fairchild Semiconductor, FDMC8882 Datasheet - Page 2

• Manufacturer Part Number: FDMC8882
• Description: MOSFET N-CH 30V 8-MLP
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDMC8882

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 14.3 mOhm @ 10.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 10.5A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 20nC @ 10V
• Input Capacitance (ciss) @ Vds: 945pF @ 15V
• Power - Max: 2.3W
• Mounting Type: Surface Mount
• Package / Case: 8-MLP, Power33
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2010 Fairchild Semiconductor Corporation
FDMC8882 Rev.C2
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
NOTES:
1. R
2. Pulse Test: Pulse Width < 300 Ps, Duty cycle < 2.0 %.
BV
'BV
I
I
V
r
g
C
C
C
t
t
t
t
Q
Q
Q
V
t
Q
R
DSS
GSS
'V
d(on)
r
d(off)
f
rr
the user's board design.
DS(on)
FS
GS(th)
SD
'T
'T
iss
oss
rss
g
g(TOT)
gs
gd
rr
Symbol
TJA
DSS
GS(th)
DSS
J
J
is determined with the device mounted on a 1 in
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Total Gate Charge
Gate to Drain “Miller” Charge
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Parameter
a. 53 °C/W when mounted on
a 1 in
T
2
pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
J
2
= 25 °C unless otherwise noted
pad of 2 oz copper
I
I
V
V
V
I
V
V
V
T
V
D
D
D
V
V
V
V
V
f = 1 MHz
V
V
I
DS
GS
J
GS
GS
GS
GS
DD
F
DS
DD
GS
GS
GS
= 250 PA, V
= 250 PA, referenced to 25 °C
GS
GS
= 250 PA, referenced to 25 °C
= 125 °C
= 10.5 A, di/dt = 100 A/Ps
= 24 V, V
= ±20 V, V
= V
= 10 V, I
= 4.5 V, I
= 10 V, I
= 5 V, I
= 15 V, I
= 10 V, R
= 0 V to 10 V
= 0 V to 4.5 V
= 15 V, V
= 0 V, I
= 0 V, I
DS
2
Test Conditions
, I
D
S
S
D
D
D
D
GS
= 10.5 A
GS
D
= 10.5 A
= 1.9 A
GS
GEN
DS
= 250 PA
= 10.5 A
= 10.5 A
= 10.5 A,
= 8.3 A
= 0 V
= 0 V
= 0 V,
= 0 V
= 6 :
V
I
D
T
DD
J
= 10.5 A
= 125 °C
= 15 V
(Note 2)
(Note 2)
b.125 °C/W when mounted on
a minimum pad of 2 oz copper
TJC
is guaranteed by design while R
Min
1.2
30
0.88
0.76
12.4
16.0
17.4
4.4
Typ
710
140
2.3
2.8
1.9
1.0
16
17
14
33
90
25
-5
7
3
2
7
±100
Max
14.3
22.5
TCA
1.2
1.2
945
185
135
www.fairchildsemi.com
250
28
10
2.5
14
10
30
10
20
10
1
is determined by
mV/°C
mV/°C
Units
m:
nC
nC
nC
nC
nC
PA
nA
pF
pF
pF
ns
ns
ns
ns
ns
:
V
V
V
S