FDMC7680 Fairchild Semiconductor, FDMC7680 Datasheet

MOSFET N-CH 30V 8-MLP

FDMC7680

Manufacturer Part Number
FDMC7680
Description
MOSFET N-CH 30V 8-MLP
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDMC7680

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
7.2 mOhm @ 14.8A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
14.8A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
42nC @ 10V
Input Capacitance (ciss) @ Vds
2855pF @ 15V
Power - Max
2.3W
Mounting Type
Surface Mount
Package / Case
8-MLP
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
7.4 mOhms
Forward Transconductance Gfs (max / Min)
68 S
Drain-source Breakdown Voltage
30 V
Continuous Drain Current
14.8 A
Power Dissipation
2.3 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDMC7680
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Company:
Part Number:
FDMC7680
Quantity:
38
©2010 Fairchild Semiconductor Corporation
FDMC7680 Rev.C2
FDMC7680
N-Channel Power Trench
30 V, 14.8 A, 7.2 m
Features
MOSFET Maximum Ratings
Thermal Characteristics
Package Marking and Ordering Information
V
V
I
E
P
T
R
R
D
DS
GS
AS
D
J
Max r
Max r
High performance technology for extremely low r
Termination is Lead-free and RoHS Compliant
, T
JC
JA
Symbol
Device Marking
STG
FDMC7680
DS(on)
DS(on)
= 7.2 m at V
= 9.5 m at V
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
Single Pulse Avalanche Energy
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Top
GS
GS
MLP 3.3x3.3
= 10 V, I
= 4.5 V, I
FDMC7680
-Continuous
-Pulsed
Device
D
D
= 14.8 A
= 12.4 A
Pin 1
T
A
®
= 25 °C unless otherwise noted
DS(on)
S
Parameter
MOSFET
S
S
MLP 3.3x3.3
G
Package
Bottom
1
T
T
General Description
This
Semiconductor’s advanced Power Trench
been especially tailored to minimize the on-state resistance. This
device is well suited for Power Management and load switching
applications common in Notebook Computers and Portable
Battery Packs.
Application
D
A
A
T
= 25 °C
T
= 25 °C
DC - DC Buck Converters
Notebook battery power management
Load switch in Notebook
D
C
C
D
= 25 °C
= 25 °C
N-Channel
D
Reel Size
13 ’’
(Note 1a)
(Note 1a)
(Note 1a)
(Note 3)
D
D
D
D
MOSFET
8
5
6
7
Tape Width
12 mm
is produced using Fairchild
-55 to +150
Ratings
14.8
±20
2.3
4.0
53
30
18
45
72
31
®
process that has
www.fairchildsemi.com
June 2010
3000 units
Quantity
1
4
3
2
G
S
S
Units
S
°C/W
mJ
°C
W
V
V
A

Related parts for FDMC7680

FDMC7680 Summary of contents

Page 1

... Thermal Resistance, Junction to Case JC R Thermal Resistance, Junction to Ambient JA Package Marking and Ordering Information Device Marking Device FDMC7680 FDMC7680 ©2010 Fairchild Semiconductor Corporation FDMC7680 Rev.C2 ® MOSFET General Description = 14.8 A This N-Channel D Semiconductor’s advanced Power Trench = 12 been especially tailored to minimize the on-state resistance. This ...

Page 2

... Q Reverse Recovery Charge rr NOTES determined with the device mounted the user's board design. 2: Pulse Test: Pulse Width < 300 s, Duty cycle < 2 based on starting mH ©2010 Fairchild Semiconductor Corporation FDMC7680 Rev. °C unless otherwise noted J Test Conditions I = 250 250 A, referenced to 25 ° ...

Page 3

... J Figure 3. Normalized On- Resistance vs Junction Temperature 45 PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 150 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics ©2010 Fairchild Semiconductor Corporation FDMC7680 Rev. °C unless otherwise noted J 4.0 3 2.5 2.0 1 1.0 GS 0.5 1.5 2 100 125 150 ...

Page 4

... Figure 9. Unclamped Inductive Switching Capability THIS AREA IS LIMITED BY r DS(on) SINGLE PULSE 0 MAX RATED 125 C 0.01 0.01 0 DRAIN to SOURCE VOLTAGE (V) DS Figure 11. Forward Bias Safe Operating Area ©2010 Fairchild Semiconductor Corporation FDMC7680 Rev. °C unless otherwise noted J 3000 1000 100 100 100 Figure 10 ...

Page 5

... Typical Characteristics 2 1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 0.001 SINGLE PULSE R = 125 JA 0.0001 - ©2010 Fairchild Semiconductor Corporation FDMC7680 Rev. °C unless otherwise noted RECTANGULAR PULSE DURATION (sec) Figure 13. Transient Thermal Response Curve NOTES: DUTY FACTOR ...

Page 6

... A. DOES NOT CONFORM TO JEDEC REGISTRATION MO-229 B. DIMENSIONS ARE IN MILLIMETERS. C. DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994 D. DRAWING FILE NAME : MLP08SREVA E. LAND PATTERN RECOMMENDATION IS BASED ON FSC DESIGN ONLY ©2010 Fairchild Semiconductor Corporation FDMC7680 Rev.C2 3. 3.30 0.10 C TOP VIEW 2X (0.203) SIDE VIEW 2 ...

Page 7

... PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©2010 Fairchild Semiconductor Corporation FDMC7680 Rev.C2 Power-SPM ® ® PowerTrench SM PowerXS™ Programmable Active Droop ® QFET e-Series QS Quiet Series RapidConfigure Saving our world, 1mW/W/ time™ ...

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