FDMC7680 Fairchild Semiconductor, FDMC7680 Datasheet - Page 4

• Manufacturer Part Number: FDMC7680
• Description: MOSFET N-CH 30V 8-MLP
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDMC7680

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 7.2 mOhm @ 14.8A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 14.8A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 42nC @ 10V
• Input Capacitance (ciss) @ Vds: 2855pF @ 15V
• Power - Max: 2.3W
• Mounting Type: Surface Mount
• Package / Case: 8-MLP
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 7.4 mOhms
• Forward Transconductance Gfs (max / Min): 68 S
• Drain-source Breakdown Voltage: 30 V
• Continuous Drain Current: 14.8 A
• Power Dissipation: 2.3 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2010 Fairchild Semiconductor Corporation
FDMC7680 Rev.C2
Typical Characteristics
0.01
0.1
20
10
60
10
10
1
1
Figure 7.
0.01
0.01
8
6
4
2
0
0
I
Figure 9.
D
Figure 11.
= 14.8 A
THIS AREA IS
LIMITED BY r
SINGLE PULSE
T
R
T
J
A
4
JA
= MAX RATED
= 25
V
Switching Capability
= 125
DS
0.1
Gate Charge Characteristics
0.1
t
o
AV
, DRAIN to SOURCE VOLTAGE (V)
C
8
Operating Area
Unclamped Inductive
, TIME IN AVALANCHE (ms)
o
Q
C/W
g
DS(on)
, GATE CHARGE (nC)
Forward Bias Safe
T
12
J
= 125
V
DD
1
16
= 15 V
o
1
C
V
T
DD
J
T
20
= 10 V
J
= 25 °C unless otherwise noted
= 25
10
o
10
24
C
T
J
V
= 100
DD
10 s
1 ms
DC
10 ms
100 ms
1 s
= 20 V
28
100
o
C
100
32
200
4
2000
1000
3000
1000
100
0.5
100
10
60
50
40
30
20
10
Figure 10.
50
1
0
10
0.1
25
Figure 12.
-4
Figure 8.
Limited by Package
f = 1 MHz
V
SINGLE PULSE
R
T
R
A
GS
Current vs Case Temperature
JA
JC
= 25
10
= 0 V
= 125
= 4.0
V
GS
-3
V
o
C
50
DS
Maximum Continuous Drain
= 10 V
Power Dissipation
to Source Voltage
o
o
C/W
, DRAIN TO SOURCE VOLTAGE (V)
C/W
Capacitance vs Drain
T
10
Single Pulse Maximum
c
,
-2
CASE TEMPERATURE (
t, PULSE WIDTH (sec)
75
10
1
-1
V
GS
1
= 4.5 V
100
10
o
C )
125
www.fairchildsemi.com
V
10
C
GS
C
rss
100
C
oss
= 10 V
iss
1000
150
30