FDMC7672 Fairchild Semiconductor, FDMC7672 Datasheet - Page 2

• Manufacturer Part Number: FDMC7672
• Description: MOSFET N-CH 30V 8-MLP
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDMC7672

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5.7 mOhm @ 16.9A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 16.9A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 57nC @ 10V
• Input Capacitance (ciss) @ Vds: 3890pF @ 15V
• Power - Max: 2.3W
• Mounting Type: Surface Mount
• Package / Case: 8-MLP
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 5.5 mOhms
• Forward Transconductance Gfs (max / Min): 82 S
• Drain-source Breakdown Voltage: 30 V
• Continuous Drain Current: 16.9 A
• Power Dissipation: 2.3 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2010 Fairchild Semiconductor Corporation
FDMC7672 Rev.C2
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
NOTES:
1: R
2: Pulse Test: Pulse Width < 300 s, Duty cycle < 2.0 %.
3. E
BV
I
I
V
r
g
C
C
C
R
t
t
t
t
Q
Q
Q
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
rr
the user's board design.
DS(on)
FS
BV
GS(th)
SD
iss
oss
rss
g
g(TOT)
gs
gd
rr
V
Symbol
DSS
T
T
AS
GS(th)
JA
DSS
J
J
of 144 mJ is based on starting T
is determined with the device mounted on a 1 in
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Total Gate Charge
Gate to Drain “Miller” Charge
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Parameter
J
= 25
o
C, L = 1 mH, I
a. 53 °C/W when mounted on
a 1 in
T
2
J
pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
2
= 25 °C unless otherwise noted
pad of 2 oz copper
AS
= 17 A, V
DD
I
I
V
V
= 27 V, V
V
I
V
V
V
T
V
D
D
D
V
V
V
V
V
f = 1 MHz
V
V
I
DS
GS
J
GS
GS
GS
GS
DD
F
DS
DD
GS
GS
GS
= 250 A, V
= 250 A, referenced to 25 °C
GS
GS
= 250 A, referenced to 25 °C
= 125 °C
= 16.9 A, di/dt = 100 A/ s
= 24 V, V
= 20 V, V
= V
= 10 V, I
= 4.5 V, I
= 10 V, I
= 5 V, I
= 15 V, I
= 10 V, R
= 0 V to 10 V
= 0 V to 4.5 V
= 15 V, V
= 0 V, I
= 0 V, I
GS
DS
2
Test Conditions
= 10 V.
, I
D
S
S
D
D
D
D
GS
DS
= 16.9 A
GS
D
= 16.9 A
= 1.9 A
GS
GEN
= 250 A
= 16.9 A
= 16.9 A
= 16.9 A,
= 15.0 A
= 0 V
= 0 V
= 0 V
= 0 V,
= 6
V
I
D
T
DD
J
= 16.9 A
= 125 °C
= 15 V
(Note 2)
(Note 2)
b.125 °C/W when mounted on
a minimum pad of 2 oz copper
JC
is guaranteed by design while R
Min
1.2
30
0.83
0.72
2925
1050
Typ
1.9
4.3
5.4
5.5
39
18
0.9
13
31
40
18
82
80
13
-6
6
5
9
4
3890
1400
Max
1.2
1.2
120
www.fairchildsemi.com
250
100
2.7
62
32
3.0
5.7
7.0
6.9
24
12
49
10
57
24
CA
1
is determined by
mV/°C
mV/°C
Units
m
nC
nC
nC
nC
nC
nA
pF
pF
pF
ns
ns
ns
ns
ns
V
V
V
S
A