FDMC7672 Fairchild Semiconductor, FDMC7672 Datasheet - Page 3

• Manufacturer Part Number: FDMC7672
• Description: MOSFET N-CH 30V 8-MLP
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDMC7672

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5.7 mOhm @ 16.9A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 16.9A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 57nC @ 10V
• Input Capacitance (ciss) @ Vds: 3890pF @ 15V
• Power - Max: 2.3W
• Mounting Type: Surface Mount
• Package / Case: 8-MLP
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 5.5 mOhms
• Forward Transconductance Gfs (max / Min): 82 S
• Drain-source Breakdown Voltage: 30 V
• Continuous Drain Current: 16.9 A
• Power Dissipation: 2.3 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2010 Fairchild Semiconductor Corporation
FDMC7672 Rev.C2
Typical Characteristics
50
40
30
20
10
1.6
1.4
1.2
1.0
0.8
0.6
50
40
30
20
10
0
Figure 3. Normalized On- Resistance
0
0.0
Figure 1.
-75
1
Figure 5. Transfer Characteristics
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
I
V
V
D
GS
DS
= 16.9 A
-50
V
vs Junction Temperature
= 10 V
= 5 V
GS
V
= 3.5 V
V
DS
T
-25
GS
On-Region Characteristics
J
,
,
, GATE TO SOURCE VOLTAGE (V)
JUNCTION TEMPERATURE (
DRAIN TO SOURCE VOLTAGE (V)
T
0.5
J
2
= 150
0
V
V
V
V
GS
GS
GS
GS
25
o
C
= 10 V
= 6 V
= 4.5 V
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
= 4 V
50
T
J
= 25 °C unless otherwise noted
1.0
75
3
T
J
o
100 125 150
T
= -55
C )
J
V
= 25
GS
o
= 3 V
C
o
C
1.5
4
3
0.001
0.01
100
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.1
20
15
10
10
5
0
1
Figure 2.
Figure 4.
0.0
Forward Voltage vs Source Current
0
2
vs Drain Current and Gate Voltage
Figure 6.
V
GS
= 0 V
V
T
0.2
SD
V
J
GS
= 150
10
, BODY DIODE FORWARD VOLTAGE (V)
V
Normalized On-Resistance
On-Resistance vs Gate to
GS
= 3.5 V
Source Voltage
4
Source to Drain Diode
,
I
GATE TO SOURCE VOLTAGE (V)
o
D
I
C
D
0.4
= 16.9 A
,
DRAIN CURRENT (A)
20
V
GS
0.6
6
= 6 V
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
T
T
J
J
= 125
= 25
30
0.8
o
T
o
C
J
C
= -55
T
8
J
www.fairchildsemi.com
40
= 25
V
V
V
o
1.0
GS
GS
GS
C
= 4.5 V
o
= 4 V
= 10 V
C
1.2
50
10