FDMC86102 Fairchild Semiconductor, FDMC86102 Datasheet

MOSFET N-CH 100V 8-MLP

FDMC86102

Manufacturer Part Number
FDMC86102
Description
MOSFET N-CH 100V 8-MLP
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDMC86102

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
24 mOhm @ 7A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
7A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
18nC @ 10V
Input Capacitance (ciss) @ Vds
965pF @ 50V
Power - Max
2.3W
Mounting Type
Surface Mount
Package / Case
8-MLP, Power33
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
32.8 mOhms
Forward Transconductance Gfs (max / Min)
19 S
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
20 A
Power Dissipation
41 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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©2009 Fairchild Semiconductor Corporation
FDMC86102 Rev.C
FDMC86102
N-Channel Power Trench
100 V, 20 A, 24 mΩ
Features
MOSFET Maximum Ratings
Thermal Characteristics
Package Marking and Ordering Information
V
V
I
E
P
T
R
R
D
DS
GS
AS
D
J
θJC
θJA
Max r
Max r
Low Profile - 1 mm max in Power 33
100% UIL Tested
RoHS Compliant
, T
Symbol
Device Marking
STG
FDMC86102
DS(on)
DS(on)
= 24 mΩ at V
= 38 mΩ at V
Top
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
Single Pulse Avalanche Energy
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
GS
GS
= 10 V, I
= 6 V, I
FDMC86102
Power 33
-Continuous (Silicon limited)
-Continuous
-Pulsed
Device
D
D
= 5 A
= 7 A
T
D
A
®
= 25 °C unless otherwise noted
D
Parameter
MOSFET
D
D
Bottom
Power 33
Package
S
1
S
Pin 1
T
S
T
T
T
T
General Description
This
Semiconductor‘s advanced Power Trench
been especially tailored to minimize the on-state resistance and
yet maintain superior switching performance.
Application
C
C
A
C
A
= 25 °C
= 25 °C
= 25 °C
= 25 °C
DC - DC Conversion
= 25 °C
G
N-Channel
Reel Size
13’’
D
D
D
D
(Note 1a)
(Note 1a)
(Note 1a)
(Note 3)
MOSFET
8
5
6
7
Tape Width
12 mm
is
-55 to +150
Ratings
produced using Fairchild
100
±20
2.3
53
20
29
30
72
41
7
3
®
process that has
1
4
3
2
www.fairchildsemi.com
3000 units
Quantity
July 2009
G
S
S
S
Units
°C/W
mJ
°C
W
V
V
A

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FDMC86102 Summary of contents

Page 1

... Thermal Resistance, Junction to Case θJC R Thermal Resistance, Junction to Ambient θJA Package Marking and Ordering Information Device Marking Device FDMC86102 FDMC86102 ©2009 Fairchild Semiconductor Corporation FDMC86102 Rev.C ® MOSFET General Description = 7 A This N-Channel D Semiconductor‘s advanced Power Trench = been especially tailored to minimize the on-state resistance and yet maintain superior switching performance ...

Page 2

... Reverse Recovery Charge rr NOTES determined with the device mounted on a 1in θJA the user's board design. 2. Pulse Test: Pulse Width < 300 µs, Duty cycle < 2 Starting N-ch mH FDMC86102 Rev °C unless otherwise noted J Test Conditions = 250 µ 250 µA, referenced to 25 ° ...

Page 3

... JUNCTION TEMPERATURE ( , T J Figure 3. Normalized On- Resistance vs Junction Temperature 30 µ PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 150 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics FDMC86102 Rev °C unless otherwise noted J 5 µ 5 4 2.0 2.5 3 100 125 150 ...

Page 4

... TIME IN AVALANCHE (ms) AV Figure 9. Unclamped Inductive Switching Capability THIS AREA IS LIMITED BY r DS(on) SINGLE PULSE 0 MAX RATED 125 C/W θ 0.01 0.01 0 DRAIN to SOURCE VOLTAGE (V) DS Figure 11. Forward Bias Safe Operating Area FDMC86102 Rev °C unless otherwise noted J 1000 100 100 125 ...

Page 5

... Typical Characteristics 2 1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.1 0.02 0.01 0.01 SINGLE PULSE R θ JA 0.001 - Figure 13. Junction-to-Ambient Transient Thermal Response Curve FDMC86102 Rev °C unless otherwise noted 125 C RECTANGULAR PULSE DURATION (sec NOTES: DUTY FACTOR PEAK θJA θJA ...

Page 6

... Dimensional Outline and Pad Layout FDMC86102 Rev.C 6 www.fairchildsemi.com ...

Page 7

... Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDMC86102 Rev.C F-PFS™ PowerTrench ® FRFET PowerXS™ SM Global Power Resource Programmable Active Droop™ ® Green FPS™ QFET Green FPS™ ...

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