FDMC86102 Fairchild Semiconductor, FDMC86102 Datasheet - Page 5

• Manufacturer Part Number: FDMC86102
• Description: MOSFET N-CH 100V 8-MLP
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDMC86102

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 24 mOhm @ 7A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 7A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 18nC @ 10V
• Input Capacitance (ciss) @ Vds: 965pF @ 50V
• Power - Max: 2.3W
• Mounting Type: Surface Mount
• Package / Case: 8-MLP, Power33
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 32.8 mOhms
• Forward Transconductance Gfs (max / Min): 19 S
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 20 A
• Power Dissipation: 41 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDMC86102 Rev.C
Typical Characteristics
0.001
0.01
0.1
2
1
10
-4
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
Figure 13. Junction-to-Ambient Transient Thermal Response Curve
10
-3
SINGLE PULSE
R
θ
JA
= 125
T
J
= 25 °C unless otherwise noted
o
C/W
10
-2
t, RECTANGULAR PULSE DURATION (sec)
10
-1
5
1
NOTES:
DUTY FACTOR: D = t
PEAK T
10
J
= P
DM
x Z
P
θJA
DM
1
100
/t
x R
2
θJA
t
1
+ T
t
2
www.fairchildsemi.com
A
1000