FDMS0312S Fairchild Semiconductor, FDMS0312S Datasheet

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FDMS0312S

Manufacturer Part Number
FDMS0312S
Description
MOSFET N-CH 30V/20V POWER56
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®, SyncFET™r
Datasheet

Specifications of FDMS0312S

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
4.4 mOhm @ 18A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
19A
Vgs(th) (max) @ Id
3V @ 1mA
Gate Charge (qg) @ Vgs
46nC @ 10V
Input Capacitance (ciss) @ Vds
2820pF @ 15V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-PQFN, Power56
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDMS0312S
Manufacturer:
FAIRCHILD
Quantity:
1 000
Part Number:
FDMS0312S
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
©2010 Fairchild Semiconductor Corporation
FDMS0312S Rev.C
FDMS0312S
N-Channel PowerTrench
30 V, 42 A, 4.4 m
Features
MOSFET Maximum Ratings
Thermal Characteristics
Package Marking and Ordering Information
V
V
I
E
P
T
R
R
D
DS
GS
AS
D
J
Max r
Max r
Advanced Package and Silicon combination for low r
and high efficiency
SyncFET Schottky Body Diode
MSL1 robust package design
100% UIL tested
RoHS Compliant
, T
JC
JA
Symbol
Device Marking
STG
FDMS0312S
DS(on)
DS(on)
= 4.4 m at V
= 5.8 m at V
Top
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
Single Pulse Avalanche Energy
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
GS
GS
= 10 V, I
= 4.5 V, I
-Continuous (Silicon limited)
-Continuous
-Pulsed
FDMS0312S
Device
Power 56
D
D
= 18 A
= 14 A
T
®
A
D
= 25 °C unless otherwise noted
SyncFET
D
Parameter
D
D
Bottom
DS(on)
Power 56
Package
1
S
TM
T
T
T
T
S
T
General Description
The FDMS0312S has been designed to minimize losses in
power conversion application. Advancements in both silicon and
package technologies have been combined to offer the lowest
r
device has the added benefit of an efficient monolithic Schottky
body diode.
Applications
C
C
A
C
A
DS(on)
= 25 °C
= 25 °C
S
= 25 °C
= 25 °C
= 25 °C
Synchronous Rectifier for DC/DC Converters
Notebook Vcore/ GPU low side switch
Networking Point of Load low side switch
Desktop
Pin 1
G
while maintaining excellent switching performance. This
Reel Size
3 ’’
(Note 1a)
(Note 1a)
(Note 1a)
(Note 3)
(Note 4)
D
D
D
D
5
6
7
8
Tape Width
12 mm
-55 to +150
Ratings
±20
2.5
2.7
30
42
83
19
90
60
46
50
January 2010
www.fairchildsemi.com
3000 units
4
3
2
1
Quantity
G
S
S
S
Units
°C/W
mJ
°C
W
V
V
A

Related parts for FDMS0312S

FDMS0312S Summary of contents

Page 1

... Device FDMS0312S FDMS0312S ©2010 Fairchild Semiconductor Corporation FDMS0312S Rev.C ® TM SyncFET General Description The FDMS0312S has been designed to minimize losses power conversion application. Advancements in both silicon and = package technologies have been combined to offer the lowest r while maintaining excellent switching performance. This ...

Page 2

... JA the user's board design. 2. Pulse Test: Pulse Width < 300 s, Duty cycle < 2.0%. ° based on starting mH N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied. FDMS0312S Rev °C unless otherwise noted J Test Conditions mA mA, referenced to 25 °C ...

Page 3

... JUNCTION TEMPERATURE ( , T J Figure 3. Normalized On- Resistance vs Junction Temperature 90 PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics FDMS0312S Rev °C unless otherwise noted J PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 1.5 2 100 125 150 125 ...

Page 4

... Unclamped Inductive Switching Capability 300 100 10 THIS AREA IS 1 LIMITED BY r DS(on) SINGLE PULSE T = MAX RATED 0 125 C 0.01 0.01 0 DRAIN to SOURCE VOLTAGE (V) DS Figure 11. Forward Bias Safe Operating Area FDMS0312S Rev °C unless otherwise noted 100 100 3000 1000 100 100 ms ...

Page 5

... Typical Characteristics 2 1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 0.001 SINGLE PULSE R 0.0001 - Figure 13. Junction-to-Ambient Transient Thermal Response Curve FDMS0312S Rev °C unless otherwise noted 125 C RECTANGULAR PULSE DURATION (sec NOTES: DUTY FACTOR PEAK 100 1 10 1000 www ...

Page 6

... MOSFET. Figure 14 shows the reverses recovery characteristic of the FDMS0312S di/dt = 300 TIME (ns) Figure 14. FDMS0312S SyncFET body diode reverse recovery characteristic FDMS0312S Rev.C (continued) Schottky barrier diodes exhibit significant leakage at high tem- perature and high reverse voltage. This will increase the power in the device ...

Page 7

... Dimensional Outline and Pad Layout FDMS0312S Rev.C 7 www.fairchildsemi.com ...

Page 8

... PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDMS0312S Rev.C ® FlashWriter * PDP SPM™ FPS™ Power-SPM™ F-PFS™ PowerTrench ® FRFET PowerXS™ ...

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