FDMS0312S Fairchild Semiconductor, FDMS0312S Datasheet - Page 4

• Manufacturer Part Number: FDMS0312S
• Description: MOSFET N-CH 30V/20V POWER56
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®, SyncFET™r

Specifications of FDMS0312S

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4.4 mOhm @ 18A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 19A
• Vgs(th) (max) @ Id: 3V @ 1mA
• Gate Charge (qg) @ Vgs: 46nC @ 10V
• Input Capacitance (ciss) @ Vds: 2820pF @ 15V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-PQFN, Power56
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDMS0312S Rev.C
Typical Characteristics
0.01
300
100
0.1
30
10
10
10
1
8
6
4
2
0
Figure 7.
0.01
1
0.01
0
THIS AREA IS
LIMITED BY r
I
Figure 9.
D
Figure 11. Forward Bias Safe
= 18 A
5
V
Switching Capability
DS
0.1
Gate Charge Characteristics
SINGLE PULSE
T
R
T
0.1
t
AV
, DRAIN to SOURCE VOLTAGE (V)
J
A
Operating Area
JA
10
DS(on)
= MAX RATED
Unclamped Inductive
= 25
, TIME IN AVALANCHE (ms)
Q
= 125
g
, GATE CHARGE (nC)
o
V
C
DD
15
o
T
C/W
= 10 V
J
1
= 125
1
T
J
20
= 25
T
o
C
J
V
= 25 °C unless otherwise noted
o
DD
C
T
10
J
= 15 V
25
= 100
10
V
DD
o
C
1 s
100 s
1 ms
10 ms
100 ms
10 s
DC
30
= 20 V
100200
100
35
4
3000
1000
3000
1000
100
0.5
100
90
60
30
10
Figure 10.
50
0
1
10
0.1
25
Figure 12.
-4
f = 1 MHz
V
Limited by Package
SINGLE PULSE
R
T
Figure 8.
GS
Current vs Case Temperature
A
JA
V
= 25
= 0 V
GS
10
= 125
-3
= 10 V
V
o
50
C
DS
Power Dissipation
Maximum Continuous Drain
to Source Voltage
o
, DRAIN TO SOURCE VOLTAGE (V)
T
C/W
c
10
Single Pulse Maximum
Capacitance vs Drain
,
CASE TEMPERATURE (
-2
R
t, PULSE WIDTH (sec)
JC
75
1
= 2.7
10
-1
o
C/W
1
100
V
GS
= 4.5 V
10
o
C )
V
C
C
C
GS
125
iss
oss
rss
10
= 10 V
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100
1000
150
30