FDMS7658AS Fairchild Semiconductor, FDMS7658AS Datasheet

MOSFET N-CH 30V POWER56

FDMS7658AS

Manufacturer Part Number
FDMS7658AS
Description
MOSFET N-CH 30V POWER56
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®, SyncFET™r
Datasheet

Specifications of FDMS7658AS

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
1.9 mOhm @ 28A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
29A
Vgs(th) (max) @ Id
3V @ 1mA
Gate Charge (qg) @ Vgs
109nC @ 10V
Input Capacitance (ciss) @ Vds
7350pF @ 15V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-PQFN, Power56
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
2 m Ohms
Forward Transconductance Gfs (max / Min)
181 S
Drain-source Breakdown Voltage
30 V
Continuous Drain Current
49 A
Power Dissipation
89 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDMS7658AS
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Company:
Part Number:
FDMS7658AS
Quantity:
3 000
©2009 Fairchild Semiconductor Corporation
FDMS7658AS Rev.C
FDMS7658AS
N-Channel PowerTrench
30 V, 49 A, 1.9 mΩ
Features
MOSFET Maximum Ratings
Thermal Characteristics
Package Marking and Ordering Information
V
V
I
dv/dt
E
P
T
R
R
D
DS
GS
AS
D
J
θJC
θJA
Max r
Max r
Advanced Package and Silicon combination for low r
and high efficiency
SyncFET Schottky Body Diode
MSL1 robust package design
100% UIL tested
RoHS Compliant
, T
Symbol
Device Marking
STG
FDMS7658AS
DS(on)
DS(on)
= 1.9 mΩ at V
= 2.2 mΩ at V
Top
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
MOSFET dv/dt
Single Pulse Avalanche Energy
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
GS
GS
FDMS7658AS
= 10 V, I
= 7 V, I
-Continuous
-Continuous (Silicon limited)
-Pulsed
Power 56
Device
D
D
= 26 A
= 28 A
T
®
D
A
= 25 °C unless otherwise noted
D
SyncFET
Parameter
D
D
Bottom
DS(on)
Power 56
Package
1
S
TM
S
T
T
T
T
T
General Description
The FDMS7658AS has been designed to minimize losses in
power conversion application. Advancements in both silicon and
package technologies have been combined to offer the lowest
r
device has the added benefit of an efficient monolithic Schottky
body diode.
Applications
C
C
A
C
A
DS(on)
S
= 25 °C
= 25 °C
= 25 °C
= 25 °C
= 25 °C
Synchronous Rectifier for DC/DC Converters
Notebook Vcore/ GPU low side switch
Networking Point of Load low side switch
Telecom secondary side rectification
Pin 1
G
while maintaining excellent switching performance. This
Reel Size
13 ’’
(Note 1a)
(Note 1a)
(Note 1a)
D
D
(Note 4)
(Note 3)
D
D
5
6
7
8
Tape Width
12 mm
-55 to +150
Ratings
177
150
162
±20
1.5
2.5
1.4
30
49
29
89
50
September 2009
www.fairchildsemi.com
4
3
2
1
3000 units
Quantity
G
S
S
S
Units
°C/W
V/ns
mJ
°C
W
V
V
A

Related parts for FDMS7658AS

FDMS7658AS Summary of contents

Page 1

... Device FDMS7658AS FDMS7658AS ©2009 Fairchild Semiconductor Corporation FDMS7658AS Rev.C ® TM SyncFET General Description The FDMS7658AS has been designed to minimize losses power conversion application. Advancements in both silicon and = package technologies have been combined to offer the lowest r while maintaining excellent switching performance. This ...

Page 2

... Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0%. ° 162 mJ is based on starting mH N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied. FDMS7658AS Rev °C unless otherwise noted J Test Conditions mA mA, referenced to 25 ° ...

Page 3

... T J Figure 3. Normalized On- Resistance vs Junction Temperature 150 PULSE DURATION = 80 µ s DUTY CYCLE = 0.5% MAX 120 125 1.0 1.5 2.0 2 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics FDMS7658AS Rev °C unless otherwise noted µ s 1.5 2 100 125 150 300 100 ...

Page 4

... THIS AREA IS 1 LIMITED BY r DS(on) SINGLE PULSE T = MAX RATED 0 125 C/W θ 0.01 0.01 0 DRAIN to SOURCE VOLTAGE (V) DS Figure 11. Forward Bias Safe Operating Area FDMS7658AS Rev °C unless otherwise noted J 10000 1000 100 125 100 500 1000 1 ms ...

Page 5

... Typical Characteristics 2 1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.1 0.02 0.01 0.01 SINGLE PULSE R θ JA 0.001 - Figure 13. Junction-to-Ambient Transient Thermal Response Curve FDMS7658AS Rev °C unless otherwise noted 125 C RECTANGULAR PULSE DURATION (sec NOTES: DUTY FACTOR PEAK θJA θJA ...

Page 6

... MOSFET. Figure 14 shows the reverses recovery characteristic of the FDMS7658AS di/dt = 300 100 TIME (ns) Figure 14. FDMS7658AS SyncFET body diode reverse recovery characteristic FDMS7658AS Rev.C (continued) Schottky barrier diodes exhibit significant leakage at high tem- perature and high reverse voltage. This will increase the power in the device µ 150 200 Figure 15 ...

Page 7

... Dimensional Outline and Pad Layout FDMS7658AS Rev.C 7 www.fairchildsemi.com ...

Page 8

... PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDMS7658AS Rev.C FPS™ PowerTrench F-PFS™ PowerXS™ ® FRFET Programmable Active Droop™ SM ® Global Power Resource QFET Green FPS™ ...

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