FDMS7658AS Fairchild Semiconductor, FDMS7658AS Datasheet - Page 3

• Manufacturer Part Number: FDMS7658AS
• Description: MOSFET N-CH 30V POWER56
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®, SyncFET™r

Specifications of FDMS7658AS

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1.9 mOhm @ 28A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 29A
• Vgs(th) (max) @ Id: 3V @ 1mA
• Gate Charge (qg) @ Vgs: 109nC @ 10V
• Input Capacitance (ciss) @ Vds: 7350pF @ 15V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-PQFN, Power56
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2 m Ohms
• Forward Transconductance Gfs (max / Min): 181 S
• Drain-source Breakdown Voltage: 30 V
• Continuous Drain Current: 49 A
• Power Dissipation: 89 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDMS7658AS Rev.C
Typical Characteristics
150
120
150
120
1.6
1.4
1.2
1.0
0.8
0.6
90
60
30
90
60
30
Figure 3. Normalized On- Resistance
0
0
Figure 1.
0.0
-75
1.0
Figure 5. Transfer Characteristics
I
V
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
V
D
GS
DS
= 28 A
-50
= 10 V
vs Junction Temperature
= 5 V
1.5
V
T
V
-25
J
DS
GS
On-Region Characteristics
,
0.5
JUNCTION TEMPERATURE (
,
, GATE TO SOURCE VOLTAGE (V)
DRAIN TO SOURCE VOLTAGE (V)
2.0
V
0
T
V
V
V
J
GS
GS
GS
GS
= 125
= 10 V
= 4.5 V
= 4 V
= 3.5 V
25
µ
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
s
1.0
o
2.5
C
50
T
J
= 25 °C unless otherwise noted
3.0
75
T
J
= -55
T
1.5
J
o
100 125 150
C )
= 25
V
o
GS
3.5
C
o
= 3 V
C
µ
s
2.0
4.0
3
0.001
0.01
300
100
0.1
10
5
4
3
2
1
0
8
6
4
2
0
1
Figure 2.
Figure 4.
0.0
0
Forward Voltage vs Source Current
2
vs Drain Current and Gate Voltage
Figure 6.
V
GS
T
= 0 V
J
V
= 125
0.2
SD
V
30
, BODY DIODE FORWARD VOLTAGE (V)
V
GS
Normalized On-Resistance
On-Resistance vs Gate to
GS
Source Voltage
o
= 3 V
4
Source to Drain Diode
,
C
I
GATE TO SOURCE VOLTAGE (V)
D
I
D
0.4
= 28 A
,
T
DRAIN CURRENT (A)
V
J
GS
60
= -55
= 4.5 V
V
GS
T
o
0.6
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
J
C
6
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
= 3.5 V
= 25
T
J
T
= 125
J
90
= 25
o
C
V
0.8
GS
o
o
C
C
= 4 V
V
GS
8
120
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= 10 V
1.0
µ
µ
s
s
150
1.2
10