FDP8443_F085 Fairchild Semiconductor, FDP8443_F085 Datasheet - Page 2

• Manufacturer Part Number: FDP8443_F085
• Description: MOSFET N-CH 40V TO-220AB-3
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDP8443_F085

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3.5 mOhm @ 80A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 20A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 185nC @ 10V
• Input Capacitance (ciss) @ Vds: 9310pF @ 25V
• Power - Max: 188W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Formed Leads
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 3.5 m Ohms
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 80 A
• Power Dissipation: 188 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDP8443_F085 Rev. A
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
MOSFET Maximum Ratings
Thermal Characteristics
Package Marking and Ordering Information
B
I
I
V
r
C
C
C
R
Q
Q
Q
Q
Q
V
V
I
E
P
T
R
R
Symbol
DSS
GSS
DS(on)
Symbol
D
J
VDSS
GS(th)
DSS
GS
AS
D
iss
oss
rss
G
θJC
θJA
g(TOT)
g(TH)
gs
gs2
gd
Device Marking
, T
STG
FDP8443
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source Voltage
Gate to Source Voltage
Drain Current Continuous (T
Continuous (T
Pulsed
Single Pulse Avalanche Energy
Power Dissipation
Derate above 25
Operating and Storage Temperature
Gate to Source Threshold Voltage
Drain to Source On Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge at 10V
Threshold Gate Charge
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller“ Charge
FDP8443_F085
amb
Parameter
Device
o
C
= 25
o
C, V
GS
C
= 10V, with R
T
< 144
C
Parameter
TO-220AB
Package
= 25°C unless otherwise noted
T
C
o
= 25°C unless otherwise noted
C, V
V
f = 1MHz
V
V
V
V
I
I
T
I
V
V
V
D
D
GS
D
J
DS
GS
GS
GS
GS
DS
GS
GS
θJA
= 250μA, V
= 80A, V
= 80A, V
= 175
= 10V)
= 25V, V
= 0.5V, f = 1MHz
= 0 to 10V
= 0 to 2V
= 32V,
= V
= 0V
= ±20V
= 62
Test Conditions
DS
2
o
C
o
, I
C/W)
Reel Size
GS
GS
D
GS
Tube
GS
= 10V
= 10V,
= 250μA
= 0V
= 0V,
V
T
I
DD
I
C
g
D
= 150
= 1mA
= 35A
(Note 2)
= 20V
(Note 1)
o
Tape Width
C
N/A
Min
40
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
See Figure 4
-55 to +175
Ratings
9310
17.5
18.8
800
510
142
Typ
1.25
0.9
0.8
2.8
2.7
4.7
±20
531
188
36
32
62
40
80
20
-
-
-
-
www.fairchildsemi.com
±100
Max
Quantity
250
185
3.5
6.1
23
50 units
1
-
4
-
-
-
-
-
-
-
Units
o
o
Units
W/
μA
nA
mΩ
nC
nC
nC
nC
nC
C/W
C/W
pF
pF
pF
mJ
Ω
V
o
W
V
V
V
A
C
o
C