FDP8443_F085 Fairchild Semiconductor, FDP8443_F085 Datasheet - Page 4

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FDP8443_F085

Manufacturer Part Number
FDP8443_F085
Description
MOSFET N-CH 40V TO-220AB-3
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDP8443_F085

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
3.5 mOhm @ 80A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
20A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
185nC @ 10V
Input Capacitance (ciss) @ Vds
9310pF @ 25V
Power - Max
188W
Mounting Type
Through Hole
Package / Case
TO-220-3 Formed Leads
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
3.5 m Ohms
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
80 A
Power Dissipation
188 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
FDP8443_F085 Rev. A
Typical Characteristics
Figure 1. Normalized Power Dissipation vs Case
5000
1.2
1.0
0.8
0.6
0.4
0.2
0.0
1000
100
1E-3
0.01
10
0.1
0
10
2
1
10
-5
SINGLE PULSE
V
-5
GS
D = 0.50
25
SINGLE PULSE
DUTY CYCLE - DESCENDING ORDER
= 10V
0.20
0.10
0.05
0.02
0.01
T
C
, CASE TEMPERATURE
50
Temperature
Figure 3. Normalized Maximum Transient Thermal Impedance
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
10
75
10
-4
-4
100
125
Figure 4. Peak Current Capability
(
o
C
10
)
t, RECTANGULAR PULSE DURATION(s)
10
t, RECTANGULAR PULSE DURATION(s)
-3
150
-3
175
4
10
Figure 2. Maximum Continuous Drain Current vs
10
-2
-2
200
160
120
80
40
0
25
50
10
Case Temperature
10
-1
T
-1
C
NOTES:
DUTY FACTOR: D = t
PEAK T
, CASE TEMPERATURE
75
CURRENT LIMITED
BY PACKAGE
J
= P
T
FOR TEMPERATURES
ABOVE 25
CURRENT AS FOLLOWS:
C
I = I
100
DM
= 25
2
x Z
o
10
C
θJC
P
10
o
0
DM
1
C DERATE PEAK
125
/t
0
x R
2
175 - T
150
www.fairchildsemi.com
θJC
(
t
1
+ T
o
C
C
t
V
150
2
)
C
GS
= 10V
10
175
10
1
1

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