FDMC7660S Fairchild Semiconductor, FDMC7660S Datasheet

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FDMC7660S

Manufacturer Part Number
FDMC7660S
Description
MOSFET N-CH 30V 8-PQFN
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®, SyncFET™r
Datasheet

Specifications of FDMC7660S

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
2.2 mOhm @ 20A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
20A
Vgs(th) (max) @ Id
2.5V @ 1mA
Gate Charge (qg) @ Vgs
66nC @ 10V
Input Capacitance (ciss) @ Vds
4325pF @ 15V
Power - Max
2.3W
Mounting Type
Surface Mount
Package / Case
6-MLP, Power33
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDMC7660S
Manufacturer:
FAIRCHILD/ON
Quantity:
20 000
Company:
Part Number:
FDMC7660S
Quantity:
2 900
Company:
Part Number:
FDMC7660S
Quantity:
400
Company:
Part Number:
FDMC7660S
Quantity:
400
©2009 Fairchild Semiconductor Corporation
FDMC7660S Rev.C
FDMC7660S
N-Channel Power Trench
30 V, 20 A, 2.2 mΩ
Features
MOSFET Maximum Ratings
Thermal Characteristics
Package Marking and Ordering Information
V
V
I
E
P
T
R
R
D
DS
GS
AS
D
J
θJC
θJA
Max r
Max r
High performance technology for extremely low r
Termination is Lead-free and RoHS Compliant
, T
Symbol
Device Marking
STG
FDMC7660S
DS(on)
DS(on)
= 2.2 mΩ at V
= 2.95 mΩ at V
Top
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
Single Pulse Avalanche Energy
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
GS
Power 33
GS
= 10 V, I
FDMC7660S
= 4.5 V, I
-Continuous
-Continuous (Silicon limited)
-Pulsed
Device
D
= 20 A
D
= 18 A
T
D
A
®
= 25 °C unless otherwise noted
D
DS(on)
Parameter
SyncFET
D
D
Bottom
Power 33
Package
S
1
S
Pin 1
T
T
S
T
General Description
The FDMC7660S has been designed to minimize losses in
power conversion applications. Advancements in both silicon
and package technologies have been combined to offer the
lowest
performance. This device has the added benefit of an efficient
monolithic Schottky body diode.
Applications
C
C
A
= 25 °C
= 25 °C
= 25 °C
Synchronous Rectifier for DC/DC Converters
Notebook Vcore/GPU low side switch
Networking Point of Load low side switch
Telecom secondary side rectification
G
r
DS(on)
Reel Size
13 ’’
(Note 1a)
(Note 1a)
(Note 1a)
(Note 4)
(Note 3)
while
D
D
D
D
5
6
7
8
maintaining
Tape Width
12 mm
-55 to +150
Ratings
±20
100
200
128
2.3
53
30
40
20
41
3
excellent
December 2009
www.fairchildsemi.com
4
3
2
1
3000 units
Quantity
switching
G
S
S
S
Units
°C/W
mJ
°C
W
V
V
A

Related parts for FDMC7660S

FDMC7660S Summary of contents

Page 1

... Device FDMC7660S FDMC7660S ©2009 Fairchild Semiconductor Corporation FDMC7660S Rev.C ® ™ SyncFET General Description = 20 A The FDMC7660S has been designed to minimize losses in D power conversion applications. Advancements in both silicon = and package technologies have been combined to offer the lowest r DS(on) DS(on) performance. This device has the added benefit of an efficient monolithic Schottky body diode ...

Page 2

... Pulse Test: Pulse Width < 300 µs, Duty cycle < 2 Starting N-ch mH N-ch device, the negative Vgs rating is for low duty cycle pulse ocurrence only. No continuous rating is implied. ©2009 Fairchild Semiconductor Corporation FDMC7660S Rev °C unless otherwise noted J Test Conditions mA mA, referenced to 25 ° ...

Page 3

... Figure 3. Normalized On- Resistance vs Junction Temperature 200 µ PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 150 125 DS J 100 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics ©2009 Fairchild Semiconductor Corporation FDMC7660S Rev °C unless otherwise noted J µ s 1.5 2.0 2 100 125 150 200 100 0 ...

Page 4

... DS(on) SINGLE PULSE T = MAX RATED 0 125 C/W θ 0.01 0.01 0 DRAIN to SOURCE VOLTAGE (V) DS Figure 11. Forward Bias Safe Operating Area ©2009 Fairchild Semiconductor Corporation FDMC7660S Rev °C unless otherwise noted J 10000 1000 100 150 120 100 100 1000 3000 1000 100 us ...

Page 5

... DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 0.001 SINGLE PULSE 125 C/W θ JA 0.0001 - Figure 13. Junction-to-Ambient Transient Thermal Response Curve ©2009 Fairchild Semiconductor Corporation FDMC7660S Rev °C unless otherwise noted RECTANGULAR PULSE DURATION (sec NOTES: DUTY FACTOR PEAK ...

Page 6

... FDMC7660S 100 TIME (ns) Figure 14. FDMC7660S SyncFET body diode reverse recovery characteristic ©2009 Fairchild Semiconductor Corporation FDMC7660S Rev.C (continued) Schottky barrier diodes exhibit significant leakage at high tem- perature and high reverse voltage. This will increase the power in the device µ ...

Page 7

... Dimensional Outline and Pad Layout ©2009 Fairchild Semiconductor Corporation FDMC7660S Rev.C 7 www.fairchildsemi.com ...

Page 8

... Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©2009 Fairchild Semiconductor Corporation FDMC7660S Rev.C ® FlashWriter * Power-SPM™ FPS™ PowerTrench F-PFS™ PowerXS™ ® FRFET Programmable Active Droop™ ...

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