FDMC7660S Fairchild Semiconductor, FDMC7660S Datasheet - Page 4

• Manufacturer Part Number: FDMC7660S
• Description: MOSFET N-CH 30V 8-PQFN
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®, SyncFET™r

Specifications of FDMC7660S

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 2.2 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 20A
• Vgs(th) (max) @ Id: 2.5V @ 1mA
• Gate Charge (qg) @ Vgs: 66nC @ 10V
• Input Capacitance (ciss) @ Vds: 4325pF @ 15V
• Power - Max: 2.3W
• Mounting Type: Surface Mount
• Package / Case: 6-MLP, Power33
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2009 Fairchild Semiconductor Corporation
FDMC7660S Rev.C
Typical Characteristics
50
10
0.01
500
100
1
0.01
0.1
10
10
Figure 7.
8
6
4
2
0
1
0.01
0
I
Figure 9.
D
THIS AREA IS
LIMITED BY r
SINGLE PULSE
T
R
T
Figure 11.
= 20 A
J
A
θ
JA
= MAX RATED
= 25
= 125
0.1
Switching Capability
10
V
o
t
C
Gate Charge Characteristics
AV
DS
V
0.1
DD
T
o
, TIME IN AVALANCHE (ms)
, DRAIN to SOURCE VOLTAGE (V)
Operating Area
C/W
Unclamped Inductive
J
DS(on)
Q
= 125
= 10 V
V
g
DD
, GATE CHARGE (nC)
Forward Bias Safe
1
= 15 V
T
20
o
J
C
= 25
1
o
T
C
J
= 100
10
T
30
J
V
= 25 °C unless otherwise noted
DD
o
C
= 20 V
10
100
40
100 us
1 ms
10 ms
100 ms
1 s
10 s
DC
1000
100
50
4
10000
1000
150
120
3000
1000
100
90
60
30
100
0.5
10
Figure 10.
0
10
25
1
10
0.1
Figure 12.
-4
Current vs Ambient Temperature
Figure 8.
f = 1 MHz
V
GS
V
Limited by Package
GS
10
= 0 V
= 4.5 V
-3
V
50
DS
Maximum Continuous Drain
Power Dissipation
to Source Voltage
T
, DRAIN TO SOURCE VOLTAGE (V)
Capacitance vs Drain
c
10
Single Pulse Maximum
,
t, PULSE WIDTH (sec)
CASE TEMPERATURE (
V
-2
GS
75
= 10 V
1
10
-1
100
1
SINGLE PULSE
R
T
C
C
A
θ
C
JA
rss
iss
= 25
oss
R
10
o
= 125
θ
C )
JC
125
o
C
= 3
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10
o
C/W
100
o
C/W
1000
150
30