FDP054N10 Fairchild Semiconductor, FDP054N10 Datasheet

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FDP054N10

Manufacturer Part Number
FDP054N10
Description
MOSFET N-CH 100V TO-220AB-3
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDP054N10

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
5.5 mOhm @ 75A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
120A
Vgs(th) (max) @ Id
4.5V @ 250µA
Gate Charge (qg) @ Vgs
203nC @ 10V
Input Capacitance (ciss) @ Vds
13280pF @ 25V
Power - Max
263W
Mounting Type
Through Hole
Package / Case
TO-220-3 Formed Leads
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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©2010 Fairchild Semiconductor Corporation
FDP054N10 Rev. A1
MOSFET Maximum Ratings
Thermal Characteristics
*Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 120A.
V
V
I
I
E
dv/dt
P
T
T
R
R
FDP054N10
N-Channel PowerTrench
100V, 144A, 5.5mΩ
Features
• R
• Fast Switching Speed
• Low Gate Charge
• High Performance Trench Technology for Extremely Low
• High Power and Current Handling Capability
• RoHS Compliant
D
DM
DSS
GSS
AS
D
J
L
θJC
θJA
, T
R
Symbol
Symbol
DS(on)
DS(on)
STG
= 4.6mΩ ( Typ.)@ V
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
Single Pulsed Avalanche Energy
Peak Diode Avalanche Energy
Power Dissipation
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
G
D
S
GS
= 10V, I
TO-220
D
= 75A
T
C
= 25
Parameter
Parameter
- Continuous (T
- Continuous (T
- Continuous (T
- Pulsed
(T
- Derate above 25
®
C
o
C unless otherwise noted
= 25
MOSFET
o
C)
C
C
C
1
= 25
= 100
= 25
o
C
Description
This
Semiconductor’s advanced PowerTrench process that has been
especially tailored to minimize the on-state resistance and yet
maintain superior switching performance.
Application
DC to DC Converters / Synchronous Rectification
o
o
C, Silicon Limited)
C, Package Limited)
o
C, Silicon Limited)
N-Channel
(Note 2)
(Note 1)
(Note 3)
G
MOSFET
is
S
D
-55 to +175
Ratings
Ratings
1153
produced
144*
1.75
100
±20
102
120
576
263
300
0.57
62.5
3.6
August 2010
www.fairchildsemi.com
using
Fairchild
Units
W/
Units
o
V/ns
mJ
o
o
C/W
W
V
V
A
A
C
C
o
C

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FDP054N10 Summary of contents

Page 1

... Thermal Characteristics Symbol R Thermal Resistance, Junction to Case θJC R Thermal Resistance, Junction to Ambient θJA ©2010 Fairchild Semiconductor Corporation FDP054N10 Rev. A1 ® MOSFET Description = 75A This N-Channel D Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance ...

Page 2

... Starting ≤ 75A, di/dt ≤ 200A/μs, V ≤ Starting DSS 4: Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ Essentially Independent of Operating Temperature Typical Characteristics FDP054N10 Rev. A1 Package Reel Size TO-220 - unless otherwise noted C Test Conditions I = 250μA, V ...

Page 3

... Drain Current [A] D Figure 5. Capacitance Characteristics 100000 ( C iss = shorted C oss = rss = C gd 10000 1000 * Note 1MHz 100 0 Drain-Source Voltage [V] DS FDP054N10 Rev. A1 Figure 2. Transfer Characteristics *Notes: μ 1. 250 s Pulse Test Figure 4. Body Diode Forward Voltage o * Note : 300 400 Figure 6. Gate Charge Characteristics ...

Page 4

... Limited by R DS(on) 1 *Notes: 0 Single Pulse 0.01 0 Drain-Source Voltage [ 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 Single pulse 0.001 -5 10 FDP054N10 Rev. A1 (Continued) Figure 8. On-Resistance Variation * Notes : 10mA D 80 120 160 200 Figure 10. Maximum Drain Current μ μ 100 s 1ms 10ms ...

Page 5

... FDP054N10 Rev. A1 Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms 5 www.fairchildsemi.com ...

Page 6

... Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) FDP054N10 Rev. A1 Peak Diode Recovery dv/dt Test Circuit & Waveforms + + DUT DUT Driver Driver Same Type Same Type as DUT as DUT GS GS • dv/dt controlled by R • dv/dt controlled by R • I • I controlled by pulse period controlled by pulse period ...

Page 7

... Mechanical Dimensions FDP054N10 Rev. A1 TO-220 7 www.fairchildsemi.com ...

Page 8

... Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDP054N10 Rev. A1 F-PFS™ Power-SPM™ ® FRFET PowerTrench SM Global Power Resource PowerXS™ Green FPS™ Programmable Active Droop™ ...

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