FDP054N10 Fairchild Semiconductor, FDP054N10 Datasheet - Page 3

• Manufacturer Part Number: FDP054N10
• Description: MOSFET N-CH 100V TO-220AB-3
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDP054N10

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 5.5 mOhm @ 75A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 120A
• Vgs(th) (max) @ Id: 4.5V @ 250µA
• Gate Charge (qg) @ Vgs: 203nC @ 10V
• Input Capacitance (ciss) @ Vds: 13280pF @ 25V
• Power - Max: 263W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Formed Leads
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDP054N10 Rev. A1
Typical Performance Characteristics
100000
10000
1000
Figure 5. Capacitance Characteristics
1000
Figure 3. On-Resistance Variation vs.
Figure 1. On-Region Characteristics
100
100
10
7
6
5
4
3
0.1
0.1
0
C iss = C gs + C gd
C oss = C ds + C gd
C rss = C gd
* Note:
V
1. V
2. f = 1MHz
GS
=
GS
Drain Current and Gate Voltage
V
V
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
= 0V
DS
DS
100
, Drain-Source Voltage [V]
, Drain-Source Voltage[V]
I
D
, Drain Current [A]
V
(
GS
C ds = shorted
V
= 10V
GS
1
= 20V
200
*Notes:
1
1. 250
2. T
)
* Note : T
C
= 25
μ
s Pulse Test
300
o
C
C
C
C
10
C
rss
= 25
oss
iss
o
C
400
30
6
3
Figure 2. Transfer Characteristics
Figure 4. Body Diode Forward Voltage
Figure 6. Gate Charge Characteristics
1000
1000
100
100
10
10
10
8
6
4
2
0
1
1
0.2
0
3
* Notes :
1. V
2. 250
V
30
Variation vs. Source Current
and Temperature
SD
DS
0.4
μ
, Body Diode Forward Voltage [V]
Q
= 20V
s Pulse Test
V
g
4
GS
, Total Gate Charge [nC]
, Gate-Source Voltage[V]
150
V
V
V
60
DS
DS
DS
150
o
0.6
= 20V
= 50V
= 80V
C
o
C
90
5
0.8
Notes:
1. V
2. 250
25
* Note : I
120
-55
GS
o
C
o
μ
= 0V
C
s Pulse Test
6
1.0
25
150
D
www.fairchildsemi.com
o
= 75A
C
180
1.2
7