FCPF16N60NT Fairchild Semiconductor, FCPF16N60NT Datasheet

MOSFET N-CH 600V TO-220-3

FCPF16N60NT

Manufacturer Part Number
FCPF16N60NT
Description
MOSFET N-CH 600V TO-220-3
Manufacturer
Fairchild Semiconductor
Series
SupreMOS™r
Datasheet

Specifications of FCPF16N60NT

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
199 mOhm @ 8A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
16A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
52.3nC @ 10V
Input Capacitance (ciss) @ Vds
2170pF @ 100V
Power - Max
35.7W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.17 Ohms
Forward Transconductance Gfs (max / Min)
13 S
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
16 A
Power Dissipation
134.4 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Continuous Drain Current Id
16A
Drain Source Voltage Vds
600V
On Resistance Rds(on)
170mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
2V
Power Dissipation Pd
1.08W
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

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Manufacturer
Quantity
Price
Part Number:
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Manufacturer:
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Part Number:
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Manufacturer:
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Quantity:
20 000
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Quantity:
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©2009 Fairchild Semiconductor Corporation
FCP16N60N / FCPF16N60NT Rev. A1
MOSFET Maximum Ratings
Thermal Characteristics
V
V
I
I
E
I
E
dv/dt
P
T
T
*Drain current limited by maximum junction temperature
R
R
R
D
DM
AR
FCP16N60N / FCPF16N60NT
N-Channel MOSFET
600V, 16A, 0.170
Features
• R
• Ultra low gate charge ( Typ. Qg = 40.2nC)
• Low effective output capacitance
• 100% avalanche tested
• RoHS compliant
J
L
DSS
GSS
AS
AR
D
, T
JC
CS
JA
Symbol
Symbol
STG
DS(on)
= 0.17
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
MOSFET dv/dt Ruggedness
Peak Diode Recovery dv/dt
Power Dissipation
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Resistance, Junction to Case
Thermal Resistance, Case to Heat Sink (Typical)
Thermal Resistance, Junction to Ambient
G D S
( Typ.)@ V
GS
TO-220
FCP Series
= 10V, I
D
= 8A
T
C
= 25
Parameter
Parameter
-Continuous (T
-Continuous (T
- Pulsed
(T
- Derate above 25
C
o
C unless otherwise noted*
= 25
G
D
o
S
C)
C
C
= 25
= 100
1
o
C
TO-220F
FCPF Series
o
Description
The SupreMOS MOSFET, Fairchild’s next generation of high
voltage super-junction MOSFETs, employs a deep trench filling
process that differentiates it from preceding multi-epi based
technologies. By utilizing this advanced technology and precise
process control, SupreMOS provides world class Rsp, superior
switching performance and ruggedness.
This SupreMOS MOSFET fits the industry’s AC-DC SMPS
requirements for PFC, server/telecom power, FPD TV power,
ATX power, and industrial power applications.
C)
o
C)
(Note 1)
(Note 2)
(Note 3)
FCP16N60N FCPF16N60NT
FCP16N60N FCPF16N60NT
134.4
G
16.0
10.1
48.0
1.08
0.93
62.5
0.5
-55 to +150
1.34
600
±30
355
100
300
5.3
20
SupreMOS
S
D
16.0*
10.1*
48.0*
35.7
0.29
62.5
3.5
0.5
www.fairchildsemi.com
August 2009
Units
W/
Units
o
V/ns
V/ns
C/W
mJ
mJ
o
o
W
V
V
A
A
A
C
C
o
C
TM

Related parts for FCPF16N60NT

FCPF16N60NT Summary of contents

Page 1

... R Thermal Resistance, Case to Heat Sink (Typical Thermal Resistance, Junction to Ambient JA ©2009 Fairchild Semiconductor Corporation FCP16N60N / FCPF16N60NT Rev. A1 Description = 8A The SupreMOS MOSFET, Fairchild’s next generation of high D voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based technologies. By utilizing this advanced technology and precise process control, SupreMOS provides world class Rsp, superior switching performance and ruggedness ...

Page 2

... Q Reverse Recovery Charge rr Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 5.3A Starting 16A, di/dt 200A 380V, Starting Essentially Independent of Operating Temperature Typical Characteristics FCP16N60N / FCPF16N60NT Rev. A1 Package Reel Size TO-220 - TO-220F - unless otherwise noted C Test Conditions I = 1mA 0V 1mA, Referenced to 25 ...

Page 3

... Drain Current [A] D Figure 5. Capacitance Characteristics 10000 C iss = oss = rss = C gd 7500 C oss 5000 C 2500 iss C rss 0 0 Drain-Source Voltage [V] DS FCP16N60N / FCPF16N60NT Rev. A1 Figure 2. Transfer Characteristics 100 *Notes: 1. 250 s Pulse Test 0 Figure 4. Body Diode Forward Voltage 100 V = 10V 20V GS o *Notes: T ...

Page 4

... Operation in This Area is Limited by R DS(on) *Notes: 0 150 J 3. Single Pulse 0. Drain-Source Voltage [V] DS Figure 11. Maximum Drain Current vs. Case Temperature Case Temperature C FCP16N60N / FCPF16N60NT Rev. A1 (Continued) Figure 8. On-Resistance Variation *Notes 1mA D 100 150 200 100 s 1ms 10ms 0.01 100 1000 100 ...

Page 5

... Typical Performance Characteristics Figure 12. Transient Thermal Response Curve _ FCP16N60N 2 1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 Single pulse 0.01 0.005 -5 10 Figure 13. Transient Thermal Response Curve _ FCPF16N60NT 5 0.5 1 0.2 0.1 0.05 0.1 0.02 0.01 Single pulse 0. FCP16N60N / FCPF16N60NT Rev. A1 (Continued) ...

Page 6

... FCP16N60N / FCPF16N60NT Rev. A1 Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms 6 www.fairchildsemi.com ...

Page 7

... FCP16N60N / FCPF16N60NT Rev. A1 Peak Diode Recovery dv/dt Test Circuit & Waveforms + + • • • I • www.fairchildsemi.com ...

Page 8

... Mechanical Dimensions FCP16N60N / FCPF16N60NT Rev. A1 TO-220 8 Dimensions in Millimeters www.fairchildsemi.com ...

Page 9

... Mechanical Dimensions 10.16 MAX1.47 0.80 0.10 0.35 0.10 2.54TYP [2.54 ] 0.20 9.40 FCP16N60N / FCPF16N60NT Rev. A1 TO-220F ø3.18 0.20 0.10 (7.00) (1.00x45 ) #1 2.54TYP [2.54 ] 0.20 0.20 9 2.54 0.20 (0.70) +0.10 0.50 2.76 –0.05 0.20 Dimensions in Millimeters www.fairchildsemi.com ...

Page 10

... TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended exhaustive list of all such trademarks. AccuPower™ FPS™ Auto-SPM™ F-PFS™ FRFET Build it Now™ CorePLUS™ Global Power Resource CorePOWER™ ...

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