FCPF16N60NT Fairchild Semiconductor, FCPF16N60NT Datasheet - Page 5

• Manufacturer Part Number: FCPF16N60NT
• Description: MOSFET N-CH 600V TO-220-3
• Manufacturer: Fairchild Semiconductor
• Series: SupreMOS™r

Specifications of FCPF16N60NT

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 199 mOhm @ 8A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 16A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 52.3nC @ 10V
• Input Capacitance (ciss) @ Vds: 2170pF @ 100V
• Power - Max: 35.7W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.17 Ohms
• Forward Transconductance Gfs (max / Min): 13 S
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 16 A
• Power Dissipation: 134.4 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 16A
• Drain Source Voltage Vds: 600V
• On Resistance Rds(on): 170mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 2V
• Power Dissipation Pd: 1.08W
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FCP16N60N / FCPF16N60NT Rev. A1
Typical Performance Characteristics
0.005
0.01
0.01
0.1
0.1
5
1
2
1
10
10
Figure 12. Transient Thermal Response Curve _ FCP16N60N
Figure 13. Transient Thermal Response Curve _ FCPF16N60NT
0.5
0.2
0.05
0.01
Single pulse
-5
0.1
0.02
0.5
0.05
0.2
0.02
-5
0.1
0.01
Single pulse
10
-4
10
-4
10
-3
Rectangular Pulse Duration [sec]
Rectangular Pulse Duration [sec]
(Continued)
10
10
-3
-2
5
10
-1
10
-2
*Notes:
*Notes:
P
1. Z
2. Duty Factor, D= t
3. T
P
1. Z
2. Duty Factor, D= t
3. T
DM
DM
1
JM
JM
JC
JC
- T
(t) = 3.5
(t) = 0.93
- T
C
C
10
t
t
1
= P
1
= P
t
-1
2
t
2
o
DM
DM
10
C/W Max.
o
C/W Max.
* Z
* Z
1
1
/t
/t
JC
JC
2
2
(t)
(t)
10
1
2
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