FCP16N60N Fairchild Semiconductor, FCP16N60N Datasheet

MOSFET N-CH 600V 16A TO-220-3

FCP16N60N

Manufacturer Part Number
FCP16N60N
Description
MOSFET N-CH 600V 16A TO-220-3
Manufacturer
Fairchild Semiconductor
Series
SupreMOS™r
Datasheet

Specifications of FCP16N60N

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
199 mOhm @ 8A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
16A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
52.3nC @ 10V
Input Capacitance (ciss) @ Vds
2170pF @ 100V
Power - Max
134.4W
Mounting Type
Through Hole
Package / Case
TO-220-3
Transistor Polarity
N Channel
Drain Source Voltage Vds
600V
On Resistance Rds(on)
170mohm
Rds(on) Test Voltage Vgs
10V
Operating Temperature Range
-55°C To +150°C
Transistor Case Style
TO-220
Rohs Compliant
Yes
Configuration
Single
Resistance Drain-source Rds (on)
0.17 Ohms
Forward Transconductance Gfs (max / Min)
13 S
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
16 A
Power Dissipation
134.4 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FCP16N60N
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Company:
Part Number:
FCP16N60N
Quantity:
8
©2009 Fairchild Semiconductor Corporation
FCP16N60N / FCPF16N60NT Rev. A1
MOSFET Maximum Ratings
Thermal Characteristics
V
V
I
I
E
I
E
dv/dt
P
T
T
*Drain current limited by maximum junction temperature
R
R
R
D
DM
AR
FCP16N60N / FCPF16N60NT
N-Channel MOSFET
600V, 16A, 0.170
Features
• R
• Ultra low gate charge ( Typ. Qg = 40.2nC)
• Low effective output capacitance
• 100% avalanche tested
• RoHS compliant
J
L
DSS
GSS
AS
AR
D
, T
JC
CS
JA
Symbol
Symbol
STG
DS(on)
= 0.17
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
MOSFET dv/dt Ruggedness
Peak Diode Recovery dv/dt
Power Dissipation
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Resistance, Junction to Case
Thermal Resistance, Case to Heat Sink (Typical)
Thermal Resistance, Junction to Ambient
G D S
( Typ.)@ V
GS
TO-220
FCP Series
= 10V, I
D
= 8A
T
C
= 25
Parameter
Parameter
-Continuous (T
-Continuous (T
- Pulsed
(T
- Derate above 25
C
o
C unless otherwise noted*
= 25
G
D
o
S
C)
C
C
= 25
= 100
1
o
C
TO-220F
FCPF Series
o
Description
The SupreMOS MOSFET, Fairchild’s next generation of high
voltage super-junction MOSFETs, employs a deep trench filling
process that differentiates it from preceding multi-epi based
technologies. By utilizing this advanced technology and precise
process control, SupreMOS provides world class Rsp, superior
switching performance and ruggedness.
This SupreMOS MOSFET fits the industry’s AC-DC SMPS
requirements for PFC, server/telecom power, FPD TV power,
ATX power, and industrial power applications.
C)
o
C)
(Note 1)
(Note 2)
(Note 3)
FCP16N60N FCPF16N60NT
FCP16N60N FCPF16N60NT
134.4
G
16.0
10.1
48.0
1.08
0.93
62.5
0.5
-55 to +150
1.34
600
±30
355
100
300
5.3
20
SupreMOS
S
D
16.0*
10.1*
48.0*
35.7
0.29
62.5
3.5
0.5
www.fairchildsemi.com
August 2009
Units
W/
Units
o
V/ns
V/ns
C/W
mJ
mJ
o
o
W
V
V
A
A
A
C
C
o
C
TM

Related parts for FCP16N60N

FCP16N60N Summary of contents

Page 1

... R Thermal Resistance, Case to Heat Sink (Typical Thermal Resistance, Junction to Ambient JA ©2009 Fairchild Semiconductor Corporation FCP16N60N / FCPF16N60NT Rev. A1 Description = 8A The SupreMOS MOSFET, Fairchild’s next generation of high D voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based technologies. By utilizing this advanced technology and precise process control, SupreMOS provides world class Rsp, superior switching performance and ruggedness ...

Page 2

... Q Reverse Recovery Charge rr Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 5.3A Starting 16A, di/dt 200A 380V, Starting Essentially Independent of Operating Temperature Typical Characteristics FCP16N60N / FCPF16N60NT Rev. A1 Package Reel Size TO-220 - TO-220F - unless otherwise noted C Test Conditions I = 1mA 0V 1mA, Referenced to 25 ...

Page 3

... Drain Current [A] D Figure 5. Capacitance Characteristics 10000 C iss = oss = rss = C gd 7500 C oss 5000 C 2500 iss C rss 0 0 Drain-Source Voltage [V] DS FCP16N60N / FCPF16N60NT Rev. A1 Figure 2. Transfer Characteristics 100 *Notes: 1. 250 s Pulse Test 0 Figure 4. Body Diode Forward Voltage 100 V = 10V 20V GS o *Notes: T ...

Page 4

... Operation in This Area is Limited by R DS(on) *Notes: 0 150 J 3. Single Pulse 0. Drain-Source Voltage [V] DS Figure 11. Maximum Drain Current vs. Case Temperature Case Temperature C FCP16N60N / FCPF16N60NT Rev. A1 (Continued) Figure 8. On-Resistance Variation *Notes 1mA D 100 150 200 100 s 1ms 10ms 0.01 100 1000 100 ...

Page 5

... Typical Performance Characteristics Figure 12. Transient Thermal Response Curve _ FCP16N60N 2 1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 Single pulse 0.01 0.005 -5 10 Figure 13. Transient Thermal Response Curve _ FCPF16N60NT 5 0.5 1 0.2 0.1 0.05 0.1 0.02 0.01 Single pulse 0. FCP16N60N / FCPF16N60NT Rev. A1 (Continued) ...

Page 6

... FCP16N60N / FCPF16N60NT Rev. A1 Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms 6 www.fairchildsemi.com ...

Page 7

... FCP16N60N / FCPF16N60NT Rev. A1 Peak Diode Recovery dv/dt Test Circuit & Waveforms + + • • • I • www.fairchildsemi.com ...

Page 8

... Mechanical Dimensions FCP16N60N / FCPF16N60NT Rev. A1 TO-220 8 Dimensions in Millimeters www.fairchildsemi.com ...

Page 9

... Mechanical Dimensions 10.16 MAX1.47 0.80 0.10 0.35 0.10 2.54TYP [2.54 ] 0.20 9.40 FCP16N60N / FCPF16N60NT Rev. A1 TO-220F ø3.18 0.20 0.10 (7.00) (1.00x45 ) #1 2.54TYP [2.54 ] 0.20 0.20 9 2.54 0.20 (0.70) +0.10 0.50 2.76 –0.05 0.20 Dimensions in Millimeters www.fairchildsemi.com ...

Page 10

... TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended exhaustive list of all such trademarks. AccuPower™ FPS™ Auto-SPM™ F-PFS™ FRFET Build it Now™ CorePLUS™ Global Power Resource CorePOWER™ ...

Related keywords