FCP16N60N Fairchild Semiconductor, FCP16N60N Datasheet - Page 6

• Manufacturer Part Number: FCP16N60N
• Description: MOSFET N-CH 600V 16A TO-220-3
• Manufacturer: Fairchild Semiconductor
• Series: SupreMOS™r

Specifications of FCP16N60N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 199 mOhm @ 8A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 16A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 52.3nC @ 10V
• Input Capacitance (ciss) @ Vds: 2170pF @ 100V
• Power - Max: 134.4W
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 600V
• On Resistance Rds(on): 170mohm
• Rds(on) Test Voltage Vgs: 10V
• Operating Temperature Range: -55°C To +150°C
• Transistor Case Style: TO-220
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 0.17 Ohms
• Forward Transconductance Gfs (max / Min): 13 S
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 16 A
• Power Dissipation: 134.4 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FCP16N60N / FCPF16N60NT Rev. A1
www.fairchildsemi.com
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