FCH35N60 Fairchild Semiconductor, FCH35N60 Datasheet

MOSFET N-CH 600V 35A TO-247

FCH35N60

Manufacturer Part Number
FCH35N60
Description
MOSFET N-CH 600V 35A TO-247
Manufacturer
Fairchild Semiconductor
Series
SuperMOS™r
Datasheet

Specifications of FCH35N60

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
98 mOhm @ 17.5A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
35A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
181nC @ 10V
Input Capacitance (ciss) @ Vds
6640pF @ 25V
Power - Max
312.5W
Mounting Type
Through Hole
Package / Case
TO-247-3
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
79 mOhms
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
30 V
Continuous Drain Current
35 A
Power Dissipation
312.5 W
Forward Transconductance Gfs (max / Min)
28.8 S
Gate Charge Qg
139 nC
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FCH35N60
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
©2010 Fairchild Semiconductor Corporation
FCH35N60 Rev. A1
MOSFET Maximum Ratings
Thermal Characteristics
*Drain current limited by maximum junction temperature
V
V
I
I
E
I
E
dv/dt
P
T
T
R
R
R
D
DM
AR
FCH35N60
600V N-Channel MOSFET
Features
• 650V @ T
• Typ.R
• Ultra low gate charge ( Typ. Q
• Low effective output capacitance ( Typ. C
• 100% avalanche tested
J
L
DSS
GSS
AS
AR
D
θJC
θCS
θJA
, T
Symbol
Symbol
STG
DS(on)
J
= 150°C
Drain to Source Voltage
Gate-Soure voltage
Drain Current
Drain Current
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Resistance, Junction to Case
Thermal Resistance, Case-to-Heat Sink
Thermal Resistance, Junction to Ambient
= 0.079Ω
G
D
S
g
= 139nC )
T
oss
C
= 25
.eff = 340pF )
TO-247
Parameter
Parameter
-Continuous (T
-Continuous (T
(T
- Derate above 25
- Pulsed
C
o
C unless otherwise noted*
= 25
o
C)
C
C
= 25
= 100
1
o
C
o
Description
SuperFET
voltage MOSFET family that is utilizing an advanced charge
balance mechanism for outstanding low on-resistance and lower
gate charge performance.
This advanced technology has been tailored to minimize
conduction loss, provide superior switching performance, and
withstand extreme dv/dt rate and higher avalanche energy.
Consequently, SuperFET is very suitable for various AC/DC
power conversion in switching mode operation for system
miniaturization and higher efficiency.
C)
o
C)
TM
(Note 1)
is Farichild’s proprietary, new generation of high
(Note 2)
(Note 1)
(Note 1)
(Note 3)
G
Typ.
0.24
-
-
-55 to +150
Ratings
S
D
31.25
312.5
1455
22.2
600
±30
105
300
2.5
35
20
35
SuperFET
Max.
0.4
42
February 2010
-
www.fairchildsemi.com
Units
W/
Units
o
V/ns
mJ
mJ
C/W
o
o
W
V
V
A
A
A
C
C
o
C
TM

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FCH35N60 Summary of contents

Page 1

... R Thermal Resistance, Case-to-Heat Sink θCS R Thermal Resistance, Junction to Ambient θJA ©2010 Fairchild Semiconductor Corporation FCH35N60 Rev. A1 Description TM SuperFET voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. .eff = 340pF ) This advanced technology has been tailored to minimize ...

Page 2

... Notes: 1: Repetitive Rating: Pulse width limited by maximum junction temperature 17.5A 50V 25Ω, Starting ≤ 35A, di/dt ≤ 200A/μs, V ≤ Starting DSS 4: Essentially Independent of Operating Temperature Typical Characteristics FCH35N60 Rev Package Reel Size TO-247 Test Conditions I = 250μ 250μ 250μA, Referenced to 25 ...

Page 3

... I , Drain Current [A] D Figure 5. Capacitance Characteristics 50000 10000 1000 *Note 100 1MHz ( C iss = shorted C oss = rss = 0 Drain-Source Voltage [V] DS FCH35N60 Rev. A1 Figure 2. Transfer Characteristics *Notes: 1. 250 μ s Pulse Test Figure 4. Body Diode Forward Voltage V = 20V GS o *Note 100 125 Figure 6. Gate Charge Characteristics ...

Page 4

... Limited by R DS(on) 1 *Notes: 0 Single Pulse 0. Drain-Source Voltage [V] DS 0.6 0.5 0.1 0.2 0.1 0.05 0.02 0.01 0.01 Single pulse 0.001 -5 10 FCH35N60 Rev. A1 (Continued) Figure 8. On-Resistance Variation *Notes μ 250 100 150 200 Figure 10. Maximum Drain Current μ 100 μ s ...

Page 5

... FCH35N60 Rev. A1 Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms 5 www.fairchildsemi.com ...

Page 6

... FCH35N60 Rev. A1 Peak Diode Recovery dv/dt Test Circuit & Waveforms 6 www.fairchildsemi.com ...

Page 7

... Mechanical Dimensions FCH35N60 Rev. A1 TO-247-3L 7 Dimensions in Millimeters www.fairchildsemi.com ...

Page 8

... Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FCH35N60 Rev. A1 ® FRFET PowerTrench SM Global Power Resource PowerXS™ Green FPS™ Programmable Active Droop™ ® Green FPS™ e-Series™ ...

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