FCH35N60 Fairchild Semiconductor, FCH35N60 Datasheet - Page 3

• Manufacturer Part Number: FCH35N60
• Description: MOSFET N-CH 600V 35A TO-247
• Manufacturer: Fairchild Semiconductor
• Series: SuperMOS™r

Specifications of FCH35N60

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 98 mOhm @ 17.5A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 35A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 181nC @ 10V
• Input Capacitance (ciss) @ Vds: 6640pF @ 25V
• Power - Max: 312.5W
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 79 mOhms
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: 30 V
• Continuous Drain Current: 35 A
• Power Dissipation: 312.5 W
• Forward Transconductance Gfs (max / Min): 28.8 S
• Gate Charge Qg: 139 nC
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FCH35N60 Rev. A1
Typical Performance Characteristics
Figure 3. On-Resistance Variation vs.
50000
10000
Figure 5. Capacitance Characteristics
Figure 1. On-Region Characteristics
1000
0.24
0.20
0.16
0.12
0.08
0.04
100
200
100
0.3
10
10
1
0.1
0.1
0
C iss = C gs + C gd
C oss = C ds + C gd
C rss = C gd
*Note:
V
GS
1. V
2. f = 1MHz
=
Drain Current and Gate Voltage
GS
15.0 V
10.0 V
V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
25
V
= 0V
DS
DS
, Drain-Source Voltage [V]
, Drain-Source Voltage[V]
1
I
D
, Drain Current [A]
(
V
C ds = shorted
GS
50
= 10V
1
10
*Notes:
)
75
1. 250
2. T
*Note: T
V
C
GS
= 25
μ
s Pulse Test
= 20V
100
100
o
C
C
= 25
10
C
C
C
oss
o
rss
iss
C
600
125
20
3
Figure 2. Transfer Characteristics
Figure 4. Body Diode Forward Voltage
Figure 6. Gate Charge Characteristics
200
100
500
100
10
10
10
1
8
6
4
2
0
1
0.2
4
0
Variation vs. Source Current
and Temperature
0.4
V
150
SD
150
5
, Body Diode Forward Voltage [V]
V
o
Q
C
40
GS
o
C
V
V
V
g
, Gate-Source Voltage[V]
DS
DS
DS
, Total Gate Charge [nC]
= 100V
= 250V
= 400V
6
0.8
25
80
-55
25
o
o
C
o
C
*Notes:
C
1. V
2. 250
7
*Notes:
1. V
2. 250
*Note: I
DS
GS
1.2
μ
= 20V
s Pulse Test
μ
120
= 0V
s Pulse Test
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8
D
= 35A
160
1.6
9