STL17N3LLH6 STMicroelectronics, STL17N3LLH6 Datasheet

MOSFET N-CH 30V 17A POWERFLAT

STL17N3LLH6

Manufacturer Part Number
STL17N3LLH6
Description
MOSFET N-CH 30V 17A POWERFLAT
Manufacturer
STMicroelectronics
Series
STripFET™ DeepGATE™r
Datasheets

Specifications of STL17N3LLH6

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
4.5 mOhm @ 8.5A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
17A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
17nC @ 4.5V
Input Capacitance (ciss) @ Vds
1690pF @ 25V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
PowerFlat™ (3.3 x 3.3)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0038 Ohms
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
17 A
Power Dissipation
50 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-10880-2

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STL17N3LLH6
Manufacturer:
ST
Quantity:
24
Part Number:
STL17N3LLH6
Manufacturer:
VISHAY/威世
Quantity:
20 000
Features
1. The value is rated according R
Application
Switching applications
Description
This product utilizes the 6
rules of ST’s proprietary STripFET™ technology,
with a new gate structure. The resulting Power
MOSFET exhibits the lowest R
package, that makes it suitable for the most
demanding DC-DC converter applications, where
high power density has to be achieved.
Table 1.
November 2010
STL17N3LLH6
R
Extremely low on-resistance R
High avalanche ruggedness
Low gate drive power losses
Very low switching gate charge
Order code
DS(on)
STL17N3LLH6
Order code
* Q
Device summary
g
industry benchmark
N-channel 30 V, 0.0038 Ω , 17 A PowerFLAT™(3.3x3.3)
V
30 V
DSS
th
generation of design
thj-pcb
DS(on)
0.0045 Ω
R
max.
DS(on)
STripFET™ VI DeepGATE™ Power MOSFET
DS(on)
Marking
17N3L
in a standard
17 A
Doc ID 15535 Rev 3
I
D
(1)
PowerFLAT™ (3.3 x 3.3)
Figure 1.
Package
PowerFLAT™ (3.3 x 3.3)
Pin-out configuration
D
1
S
8
BOTTOM VIEW
STL17N3LLH6
D
2
S
7
D
3
S
6
Tape and reel
Packaging
D
G
4
5
www.st.com
1/13
13

Related parts for STL17N3LLH6

STL17N3LLH6 Summary of contents

Page 1

... Device summary Order code STL17N3LLH6 November 2010 STripFET™ VI DeepGATE™ Power MOSFET R DS(on max. 0.0045 Ω ( DS(on) Figure standard DS(on) Marking 17N3L PowerFLAT™ (3.3 x 3.3) Doc ID 15535 Rev 3 STL17N3LLH6 PowerFLAT™ (3.3 x 3.3) Pin-out configuration BOTTOM VIEW Package Packaging ...

Page 2

... Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 2/ Doc ID 15535 Rev 3 STL17N3LLH6 . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 ...

Page 3

... STL17N3LLH6 1 Electrical ratings Table 2. Absolute maximum ratings Symbol V Drain-source voltage ( Gate-source voltage GS (1) I Drain current (continuous (1) I Drain current (continuous (2) I Drain current (pulsed) DM (3) P Total dissipation at T TOT (1) P Total dissipation at T TOT Derating factor T Operating junction temperature J Storage temperature ...

Page 4

... 4 (see Figure 14) f=1 MHz Gate DC Bias = 0 Test signal level = 20 mV open drain Parameter Test conditions V = 15V 4.7Ω (see Figure 13) Doc ID 15535 Rev 3 STL17N3LLH6 Min. Typ. Max ± = 250 µ 8.5 A 0.0038 0.0045 D = 8.5 A 0.0057 0.0073 D Min. Typ. Max. 1690 ...

Page 5

... STL17N3LLH6 Table 7. Source drain diode Symbol I Source-drain current SD (1) I Source-drain current (pulsed) SDM (2) V Forward on voltage SD t Reverse recovery time rr Q Reverse recovery charge rr I Reverse recovery current RRM 1. Pulse width limited by safe operating area. 2. Pulsed: pulse duration=300µs, duty cycle 1.5% ...

Page 6

... V ( Figure 5. AM08218v1 200 5V 150 4V 100 ( temperature Figure 7. AM08220v1 R DS(on (°C) 100 125 J Doc ID 15535 Rev 3 STL17N3LLH6 Thermal impedance Zth_powerflat_3.3x3.3 δ=0.5 0.2 0.1 0.05 0.02 0.01 Single pulse - Transfer characteristics Static drain-source on resistance (Ω) 4.8 V =10V GS 4.6 4 ...

Page 7

... STL17N3LLH6 Figure 8. Gate charge vs gate-source voltage Figure (V) V =15V =17A Figure 10. Normalized gate threshold voltage vs temperature V GS(th) (norm) 1.2 1.0 0.8 0.6 0.4 0.2 -50 - Figure 12. Source-drain diode forward characteristics V SD (V) 1.0 0.9 0.8 T =25°C J 0.7 0.6 T =150°C J 0.5 0.4 ...

Page 8

... AM01468v1 Figure 16. Unclamped inductive load test 3.3 1000 μF μ AM01470v1 Figure 18. Switching time waveform V (BR)DSS 10% 0 AM01472v1 Doc ID 15535 Rev 3 STL17N3LLH6 12V 47kΩ 100nF I =CONST G 100Ω GMAX 2200 μF 2.7kΩ 47kΩ 1kΩ circuit 2200 3.3 μ ...

Page 9

... STL17N3LLH6 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ® ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK trademark. Table 8. Package dimensions Dim mm. Min. Typ 0.80 0.90 ...

Page 10

... Package mechanical data Figure 19. Package drawing 10/13 Doc ID 15535 Rev 3 STL17N3LLH6 ...

Page 11

... STL17N3LLH6 Figure 20. Recommended footprint (dimensions in mm) Doc ID 15535 Rev 3 Package mechanical data AM03834v1 11/13 ...

Page 12

... Revision history 5 Revision history Table 9. Document revision history Date 24-Mar-2009 06-Jul-2010 10-Nov-2010 12/13 Revision 1 First release. 2 Updated Table 4: On/off 3 Document status promoted from preliminary data to datasheet. Doc ID 15535 Rev 3 STL17N3LLH6 Changes states. ...

Page 13

... STL17N3LLH6 Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. ...

Related keywords