STL17N3LLH6 STMicroelectronics, STL17N3LLH6 Datasheet - Page 9

• Manufacturer Part Number: STL17N3LLH6
• Description: MOSFET N-CH 30V 17A POWERFLAT
• Manufacturer: STMicroelectronics
• Series: STripFET™ DeepGATE™r

Specifications of STL17N3LLH6

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4.5 mOhm @ 8.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 17A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 17nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1690pF @ 25V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: PowerFlat™ (3.3 x 3.3)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0038 Ohms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 17 A
• Power Dissipation: 50 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10880-2

STL17N3LLH6
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
specifications, grade definitions and product status are available at: www.st.com. ECOPACK
is an ST trademark.
Table 8.
Dim.
D2
A1
E2
®
A
D
E
b
e
L
packages, depending on their level of environmental compliance. ECOPACK
Package dimensions
Doc ID 15535 Rev 3
Min.
0.80
0.25
2.50
1.76
0.30
mm.
0.90
0.02
0.30
3.30
2.65
0.65
3.30
1.91
0.40
Typ
Package mechanical data
Max.
1.00
0.05
0.35
2.75
2.01
0.50
9/13
®