NTMFS4926NT1G ON Semiconductor, NTMFS4926NT1G Datasheet - Page 4

• Manufacturer Part Number: NTMFS4926NT1G
• Description: MOSFET N-CH 30V 44A SO-8FL
• Manufacturer: ON Semiconductor

Specifications of NTMFS4926NT1G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 7 mOhm @ 30A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 9A
• Vgs(th) (max) @ Id: 2.2V @ 250µA
• Gate Charge (qg) @ Vgs: 8.7nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1004pF @ 15V
• Power - Max: 920mW
• Mounting Type: Surface Mount
• Package / Case: 8-TDFN
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 12 mOhms
• Forward Transconductance Gfs (max / Min): 17 s
• Drain-source Breakdown Voltage: 30 V
• Continuous Drain Current: 44 A
• Power Dissipation: 0.92 W, 2.7 W, 6.13 W, 21.6 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Gate Charge Qg: 8.7 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

0.015
0.014
0.013
0.012
0.010
0.009
0.008
0.007
0.006
0.005
0.004
0.003
0.011
100
90
80
70
60
50
40
30
20
10
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0
0
−50
3
10 V
Figure 5. On−Resistance Variation with
−25
I
V
Figure 1. On−Region Characteristics
D
V
GS
4
= 30 A
DS
Figure 3. On−Resistance vs. V
T
1
= 10 V
J
, DRAIN−TO−SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE (°C)
0
4.5 V
5
Temperature
25
2
V
6
GS
50
(V)
T
J
= 25°C
7
3
75
TYPICAL CHARACTERISTICS
I
8
D
100
= 30 A
V
GS
4
GS
= 2.8 V
9
http://onsemi.com
125
4.0 V
3.6 V
3.2 V
5
10
150
4
10,000
0.016
0.015
0.014
0.013
0.012
0.010
0.009
0.008
0.007
0.006
0.005
0.004
1,000
0.011
100
100
90
80
70
60
50
40
30
20
10
10
0
5
1
10
Figure 4. On−Resistance vs. Drain Current and
Figure 6. Drain−to−Source Leakage Current
V
T = 25°C
20
DS
V
V
Figure 2. Transfer Characteristics
DS
GS
= 10 V
10
30
, DRAIN−TO−SOURCE VOLTAGE (V)
, GATE−TO−SOURCE VOLTAGE (V)
2
I
D
T
T
40
, DRAIN CURRENT (A)
T
J
J
J
= 125°C
= 150°C
= 85°C
Gate Voltage
15
vs. Voltage
V
V
T
50
J
GS
GS
= 25°C
= 4.5 V
= 10 V
3
T
60
J
= −55°C
20
70
V
GS
4
T
80
J
25
= 0 V
= 125°C
90
100
30
5