NTMFS4926NT1G ON Semiconductor, NTMFS4926NT1G Datasheet - Page 6

• Manufacturer Part Number: NTMFS4926NT1G
• Description: MOSFET N-CH 30V 44A SO-8FL
• Manufacturer: ON Semiconductor

Specifications of NTMFS4926NT1G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 7 mOhm @ 30A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 9A
• Vgs(th) (max) @ Id: 2.2V @ 250µA
• Gate Charge (qg) @ Vgs: 8.7nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1004pF @ 15V
• Power - Max: 920mW
• Mounting Type: Surface Mount
• Package / Case: 8-TDFN
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 12 mOhms
• Forward Transconductance Gfs (max / Min): 17 s
• Drain-source Breakdown Voltage: 30 V
• Continuous Drain Current: 44 A
• Power Dissipation: 0.92 W, 2.7 W, 6.13 W, 21.6 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Gate Charge Qg: 8.7 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NTMFS4926N
TYPICAL CHARACTERISTICS
100
D = 0.5
0.2
10
0.1
0.05
0.02
1
0.01
0.1
SINGLE PULSE
0.01
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
t, TIME (ms)
Figure 13. Thermal Response
http://onsemi.com
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