BPV11F Vishay, BPV11F Datasheet - Page 5

• Manufacturer Part Number: BPV11F
• Description: Photodetector Transistors 15 Degree 150mW
• Manufacturer: Vishay
• Type: IR Chipr

Specifications of BPV11F

• Maximum Power Dissipation: 150 mW
• Maximum Dark Current: 50 nA
• Collector- Emitter Voltage Vceo Max: 70 V
• Maximum Operating Temperature: + 100 C
• Package / Case: T-1 3/4
• Transistor Polarity: NPN
• Wavelength Typ: 930nm
• Power Consumption: 150mW
• Viewing Angle: 15°
• No. Of Pins: 2
• Light Current: 9mA
• Dark Current: 50nA
• C-e Breakdown Voltage: 70V
• Current Rating: 50mA
• Voltage - Collector Emitter Breakdown (max): 70V
• Current - Collector (ic) (max): 10mA
• Current - Dark (id) (max): 50nA
• Wavelength: 930nm
• Power - Max: 150mW
• Mounting Type: Through Hole
• Orientation: Top View
• Transistor Case Style: T-1 3/4 (5mm)
• Svhc: No SVHC (20-Jun-2011)
• Current Ic Typ: 9mA
• Rohs Compliant: Yes
• Phototransistor Type: Phototransistor
• Polarity: NPN
• Number Of Elements: 1
• Collector-emitter Voltage: 70V
• Collector Current (dc) (max): 50mA
• Collector-emitter Sat Volt (max): 0.3V
• Dark Current (max): 50nA
• Power Dissipation: 150mW
• Peak Wavelength: 930nm
• Half-intensity Angle: 30deg
• Mounting: Through Hole
• Pin Count: 2
• Package Type: T-1 3/4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

BPV11F
Vishay Semiconductors
Package Dimensions in mm
9612200
Document Number 81505
www.vishay.com
Rev. 1.5, 13-Nov-06
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