BPV11F Vishay, BPV11F Datasheet

Photodetector Transistors 15 Degree 150mW

BPV11F

Manufacturer Part Number
BPV11F
Description
Photodetector Transistors 15 Degree 150mW
Manufacturer
Vishay
Type
IR Chipr
Datasheets

Specifications of BPV11F

Maximum Power Dissipation
150 mW
Maximum Dark Current
50 nA
Collector- Emitter Voltage Vceo Max
70 V
Maximum Operating Temperature
+ 100 C
Package / Case
T-1 3/4
Transistor Polarity
NPN
Wavelength Typ
930nm
Power Consumption
150mW
Viewing Angle
15°
No. Of Pins
2
Light Current
9mA
Dark Current
50nA
C-e Breakdown Voltage
70V
Current Rating
50mA
Voltage - Collector Emitter Breakdown (max)
70V
Current - Collector (ic) (max)
10mA
Current - Dark (id) (max)
50nA
Wavelength
930nm
Power - Max
150mW
Mounting Type
Through Hole
Orientation
Top View
Transistor Case Style
T-1 3/4 (5mm)
Svhc
No SVHC (20-Jun-2011)
Current Ic Typ
9mA
Rohs Compliant
Yes
Phototransistor Type
Phototransistor
Polarity
NPN
Number Of Elements
1
Collector-emitter Voltage
70V
Collector Current (dc) (max)
50mA
Collector-emitter Sat Volt (max)
0.3V
Dark Current (max)
50nA
Power Dissipation
150mW
Peak Wavelength
930nm
Half-intensity Angle
30deg
Mounting
Through Hole
Pin Count
2
Package Type
T-1 3/4
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BPV11F
Manufacturer:
NEC
Quantity:
15
Company:
Part Number:
BPV11F
Quantity:
3 000
BPV11F
Vishay Semiconductors
DESCRIPTION
BPV11F is a silicon NPN phototransistor with high radiant
sensitivity in black, T-1¾ plastic package with base terminal
and daylight blocking filter. Filter bandwidth is matched with
900 nm to 950 nm IR emitters.
Note
Test condition see table “Basic Characteristics”
Note
MOQ: minimum order quantity
Note
T
www.vishay.com
346
amb
PRODUCT SUMMARY
COMPONENT
BPV11F
ORDERING INFORMATION
ORDERING CODE
BPV11F
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Collector base voltage
Collector emitter voltage
Emitter base voltage
Collector current
Collector peak current
Power dissipation
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Thermal resistance junction/ambient
= 25 °C, unless otherwise specified
Silicon NPN Phototransistor, RoHS Compliant
For technical questions, contact: detectortechsupport@vishay.com
12784
PACKAGING
Connected with Cu wire, 0.14 mm
I
ca
Bulk
(mA)
t ≤ 5 s, 2 mm from body
9
t
p
TEST CONDITION
/T = 0.5, t
T
amb
≤ 47 °C
p
≤ 10 ms
MOQ: 3000 pcs, 3000 pcs/bulk
FEATURES
• Package type: leaded
• Package form: T-1¾
• Dimensions (in mm): Ø 5
• High radiant sensitivity
• Daylight blocking filter matched with 940 nm
• Fast response times
• Angle of half sensitivity: ϕ = ± 15°
• Base terminal connected
• Lead
APPLICATIONS
• Detector for industrial electronic circuitry, measurement
emitters
RoHS 2002/95/EC and WEEE 2002/96/EC
and control
2
REMARKS
ϕ (deg)
(Pb)-free
± 15
SYMBOL
V
V
V
R
T
T
I
T
P
CBO
CEO
EBO
CM
I
T
amb
thJA
stg
C
sd
V
j
component
- 40 to + 100
- 40 to + 100
VALUE
100
150
100
260
350
80
70
50
5
PACKAGE FORM
in
Document Number: 81505
900 to 980
λ
0.5
accordance
T-1¾
Rev. 1.6, 05-Sep-08
(nm)
UNIT
K/W
mW
mA
mA
°C
°C
°C
°C
V
V
V
with

Related parts for BPV11F

BPV11F Summary of contents

Page 1

... BPV11F Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant DESCRIPTION BPV11F is a silicon NPN phototransistor with high radiant sensitivity in black, T-1¾ plastic package with base terminal and daylight blocking filter. Filter bandwidth is matched with 900 nm to 950 nm IR emitters. PRODUCT SUMMARY ...

Page 2

... V CEsat 100 Ω mA 100 Ω mA off = 100 Ω mA 100 80 94 8239 Fig Relative Collector Current vs. Ambient Temperature BPV11F Vishay Semiconductors MIN. TYP. MAX 450 ± 15 930 900 to 980 130 300 6 5 110 2 mW/cm e λ = 950 nm 1.4 1.2 1.0 0.8 ...

Page 3

... BPV11F Vishay Semiconductors 100 λ = 950 nm 0.1 0.01 0.01 0 Irradiance (mW/cm²) 94 8244 e Fig Collector Light Current vs. Irradiance 100 λ = 950 mW/ 0.5 mW/ 0.2 mW/cm 0.1 mW/ 0.05 mW/cm 0.02 mW/cm 2 0.1 0 Collector Emitter Voltage (V) 94 8245 CE Fig Collector Light Current vs. Collector Emitter Voltage ...

Page 4

... Fig Relative Radiant Sensitivity vs. Angular Displacement 0.2 0.8 - 0.1 Chip position ± 0. 0.2 0.8 - 0.1 + 0.2 0.5 - 0.1 2.54 nom. BPV11F Vishay Semiconductors 0° 10° 20° 1.0 0.9 0.8 0.7 0.4 0.2 0.6 0 Area not plane + 0.15 0.5 technical drawings 1 ...

Page 5

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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