BPW85 Vishay, BPW85 Datasheet

Photodetector Transistors NPN Phototransistor 70V 100mW 850nm

BPW85

Manufacturer Part Number
BPW85
Description
Photodetector Transistors NPN Phototransistor 70V 100mW 850nm
Manufacturer
Vishay
Datasheets

Specifications of BPW85

Rise Time
2 us
Maximum Power Dissipation
100 mW
Collector- Emitter Voltage Vceo Max
70 V
Collector-emitter Breakdown Voltage
70 V
Collector-emitter Saturation Voltage
0.3 V
Fall Time
2.3 us
Maximum Operating Temperature
+ 100 C
Minimum Operating Temperature
- 40 C
Product
Phototransistor
Package / Case
T-1
Wavelength
850 nm
Transistor Polarity
NPN
Wavelength Typ
850nm
Power Consumption
100mW
Viewing Angle
25°
No. Of Pins
2
Half Angle
25°
Collector Current Typ
50mA
Transistor Type
Photo
Transistor Case Style
T-1
Current Ic Typ
50mA
Fall Time Tf
1.5µs
Lead Spacing
2.54mm
Rohs Compliant
Yes
Voltage - Collector Emitter Breakdown (max)
70V
Current - Collector (ic) (max)
50mA
Current - Dark (id) (max)
200nA
Power - Max
150mW
Mounting Type
Through Hole
Orientation
Top View
Svhc
No SVHC (20-Jun-2011)
Phototransistor Type
Phototransistor
Polarity
NPN
Number Of Elements
1
Lens Type
Clear
Emitter-collector Voltage (max)
5V
Collector-emitter Voltage
70V
Collector Current (dc) (max)
50mA
Collector-emitter Sat Volt (max)
0.3V
Dark Current (max)
200nA
Power Dissipation
100mW
Peak Wavelength
850nm
Half-intensity Angle
50deg
Mounting
Through Hole
Pin Count
2
Package Type
T-1
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BPW85
Manufacturer:
KODENSHI
Quantity:
24 390
Part Number:
BPW85-AS12
Manufacturer:
VISHAY
Quantity:
33 070
Company:
Part Number:
BPW85A
Quantity:
70 000
Part Number:
BPW85C
Manufacturer:
INFINEON
Quantity:
42 000
BPW85A, BPW85B, BPW85C
Vishay Semiconductors
DESCRIPTION
BPW85 is a silicon NPN phototransistor with high radiant
sensitivity in clear, T-1 plastic package. It is sensitive to
visible and near infrared radiation.
Note
Test condition see table “Basic Characteristics”
Note
MOQ: minimum order quantity
Note
T
www.vishay.com
414
amb
PRODUCT SUMMARY
COMPONENT
BPW85A
BPW85B
BPW85C
ORDERING INFORMATION
ORDERING CODE
BPW85A
BPW85B
BPW85C
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Collector emitter voltage
Emitter collector voltage
Collector current
Collector peak current
Power dissipation
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Thermal resistance junction/ambient
= 25 °C, unless otherwise specified
Silicon NPN Phototransistor, RoHS Compliant
For technical questions, contact: detectortechsupport@vishay.com
Connected with Cu wire
PACKAGING
20815
0.8 to 2.5
I
1.5 to 4
ca
3 to 8
Bulk
Bulk
Bulk
(mA)
t ≤ 3 s, 2 mm from case
t
p
TEST CONDITION
/T = 0.5, t
T
amb
≤ 55 °C
p
≤ 10 ms
Ø
0.14 mm
MOQ: 5000 pcs, 5000 pcs/bulk
MOQ: 5000 pcs, 5000 pcs/bulk
MOQ: 5000 pcs, 5000 pcs/bulk
FEATURES
• Package type: leaded
• Package form: T-1
• Dimensions (in mm): Ø 3
• High photo sensitivity
• High radiant sensitivity
• Suitable for visible and near infrared radiation
• Fast response times
• Angle of half sensitivity: ϕ = ± 25°
• Lead
APPLICATIONS
• Detector in electronic control and drive circuits
RoHS 2002/95/EC and WEEE 2002/96/EC
2
REMARKS
ϕ (deg)
(Pb)-free
± 25
± 25
± 25
SYMBOL
V
V
R
T
T
I
T
P
CEO
ECO
CM
I
T
amb
thJA
stg
C
sd
V
j
component
- 40 to + 100
- 40 to + 100
VALUE
100
100
100
260
450
70
50
5
PACKAGE FORM
in
Document Number: 81531
450 to 1080
450 to 1080
450 to 1080
λ
0.1
accordance
Rev. 1.8, 05-Sep-08
T-1
T-1
T-1
(nm)
UNIT
K/W
mW
mA
mA
°C
°C
°C
°C
V
V
with

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BPW85 Summary of contents

Page 1

... BPW85A, BPW85B, BPW85C Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant DESCRIPTION BPW85 is a silicon NPN phototransistor with high radiant sensitivity in clear, T-1 plastic package sensitive to visible and near infrared radiation. PRODUCT SUMMARY COMPONENT BPW85A BPW85B BPW85C Note Test condition see table “Basic Characteristics” ...

Page 2

... Collector emitter saturation voltage Turn-on time Turn-off time Cut-off frequency Note °C, unless otherwise specified amb TYPE DEDICATED CHARACTERISTICS PARAMETER E Collector light current Document Number: 81531 For technical questions, contact: detectortechsupport@vishay.com Rev. 1.8, 05-Sep-08 BPW85A, BPW85B, BPW85C 100 80 TEST CONDITION SYMBOL (BR)CEO CEO ...

Page 3

... BPW85A, BPW85B, BPW85C Vishay Semiconductors BASIC CHARACTERISTICS °C, unless otherwise specified amb Ambient Temperature (°C) 94 8304 amb Fig Collector Dark Current vs. Ambient Temperature 2 mW/ λ = 950 nm 1.4 1.2 1.0 0.8 0 Ambient Temperature (°C) 94 8239 amb Fig Relative Collector Current vs. Ambient Temperature ...

Page 4

... Wavelength (nm) 94 8348 Fig Relative Spectral Sensitivity vs. Wavelength Document Number: 81531 For technical questions, contact: detectortechsupport@vishay.com Rev. 1.8, 05-Sep-08 BPW85A, BPW85B, BPW85C 100 Fig Relative Radiant Sensitivity vs. Angular Displacement t off 1000 Vishay Semiconductors 0° ...

Page 5

... BPW85A, BPW85B, BPW85C Vishay Semiconductors PACKAGE DIMENSIONS in millimeters 96 12190 www.vishay.com For technical questions, contact: detectortechsupport@vishay.com 418 Silicon NPN Phototransistor, RoHS Compliant Document Number: 81531 Rev. 1.8, 05-Sep-08 ...

Page 6

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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