BPW85 Vishay, BPW85 Datasheet

Photodetector Transistors NPN Phototransistor 70V 100mW 850nm

BPW85

Manufacturer Part Number
BPW85
Description
Photodetector Transistors NPN Phototransistor 70V 100mW 850nm
Manufacturer
Vishay
Datasheets

Specifications of BPW85

Rise Time
2 us
Maximum Power Dissipation
100 mW
Collector- Emitter Voltage Vceo Max
70 V
Collector-emitter Breakdown Voltage
70 V
Collector-emitter Saturation Voltage
0.3 V
Fall Time
2.3 us
Maximum Operating Temperature
+ 100 C
Minimum Operating Temperature
- 40 C
Product
Phototransistor
Package / Case
T-1
Wavelength
850 nm
Transistor Polarity
NPN
Wavelength Typ
850nm
Power Consumption
100mW
Viewing Angle
25°
No. Of Pins
2
Half Angle
25°
Collector Current Typ
50mA
Transistor Type
Photo
Transistor Case Style
T-1
Current Ic Typ
50mA
Fall Time Tf
1.5µs
Lead Spacing
2.54mm
Rohs Compliant
Yes
Voltage - Collector Emitter Breakdown (max)
70V
Current - Collector (ic) (max)
50mA
Current - Dark (id) (max)
200nA
Power - Max
150mW
Mounting Type
Through Hole
Orientation
Top View
Svhc
No SVHC (20-Jun-2011)
Phototransistor Type
Phototransistor
Polarity
NPN
Number Of Elements
1
Lens Type
Clear
Emitter-collector Voltage (max)
5V
Collector-emitter Voltage
70V
Collector Current (dc) (max)
50mA
Collector-emitter Sat Volt (max)
0.3V
Dark Current (max)
200nA
Power Dissipation
100mW
Peak Wavelength
850nm
Half-intensity Angle
50deg
Mounting
Through Hole
Pin Count
2
Package Type
T-1
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BPW85
Manufacturer:
KODENSHI
Quantity:
24 390
Part Number:
BPW85-AS12
Manufacturer:
VISHAY
Quantity:
33 070
Company:
Part Number:
BPW85A
Quantity:
70 000
Part Number:
BPW85C
Manufacturer:
INFINEON
Quantity:
42 000
Silicon NPN Phototransistor
Description
BPW85 is a high speed and high sensitive silicon
NPN epitaxial planar phototransistor in a standard
epoxy the device is sensitive to visible and near
The viewing angle of ± 25 ° makes it insensible to
ambient straylight.
Features
Absolute Maximum Ratings
T
Electrical Characteristics
T
Document Number 81531
Rev. 1.5, 08-Mar-05
T-1 (∅ 3 mm) plastic package. Due to its waterclear
infrared radiation.
• Fast response times
• High photo sensitivity
• Standard T-1 (∅ 3 mm ) clear plastic package
• Axial terminals
• Angle of half sensitivity ϕ = ± 25 °
• Suitable for visible and near infrared radiation
• Selected into sensitivity groups
• Lead-free component
• Component in accordance to RoHS 2002/95/EC
Collector Emitter Voltage
Emitter Collector Voltage
Collector current
Collector peak current
Total Power Dissipation
Junction Temperature
Storage Temperature Range
Soldering Temperature
Thermal Resistance Junction/
Ambient
Collector Emitter Breakdown
Voltage
Collector-emitter dark current
Collector-emitter capacitance
amb
amb
and WEEE 2002/96/EC
= 25 °C, unless otherwise specified
= 25 °C, unless otherwise specified
Parameter
Parameter
t
T
t ≤ 3 s, 2 mm from case
I
V
V
p
C
amb
CE
CE
/T = 0.5, t
= 1 mA
= 20 V, E = 0
= 5 V, f = 1 MHz, E = 0
≤ 55 °C
Test condition
Test condition
p
≤ 10 ms
V
Applications
Detector in electronic control and drive circuits
Symbol
(BR)CEO
C
I
CEO
CEO
Symbol
V
V
R
T
P
I
T
CEO
ECO
CM
I
thJA
T
stg
C
sd
tot
j
94 8396
Min
70
- 55 to + 100
Vishay Semiconductors
Value
Typ.
100
100
100
260
450
70
50
5
1
3
Max
200
BPW85
www.vishay.com
K/W
Unit
mW
mA
mA
°C
°C
°C
V
V
Unit
nA
pF
V
1

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BPW85 Summary of contents

Page 1

... Silicon NPN Phototransistor Description BPW85 is a high speed and high sensitive silicon NPN epitaxial planar phototransistor in a standard T-1 (∅ 3 mm) plastic package. Due to its waterclear epoxy the device is sensitive to visible and near infrared radiation. The viewing angle of ± 25 ° makes it insensible to ambient straylight ...

Page 2

... V CEsat = 100 Ω mA 100 Ω mA off = 100 Ω mA Test condition Part , λ = 950 nm, 2 BPW85A BPW85B BPW85C thJA 100 20 94 8304 Figure 2. Collector Dark Current vs. Ambient Temperature Min Typ. Max ± 25 850 620 to 980 0.3 2.0 2.3 180 Symbol Min Typ ...

Page 3

... Figure 6. Collector Light Current vs. Collector Emitter Voltage 10 1 0.1 0. 8277 Figure 7. Collector Light Current vs. Collector Emitter Voltage 100 0.1 94 8294 Figure 8. Collector Emitter Capacitance vs. Collector Emitter BPW85 Vishay Semiconductors 2 BPW =1mW/ 0.5mW/cm 2 0.2mW/cm 2 0.1mW/cm 2 0.05mW/cm λ = 950 nm 100 – Collector Emitter Voltage ( ...

Page 4

... BPW85 Vishay Semiconductors Ω 100 L λ = 950 off Collector Current ( 8293 C Figure 9. Turn On/Turn Off Time vs. Collector Current 1.0 0.8 0.6 0.4 0.2 0 400 600 800 λ – Wavelength ( 8348 Figure 10. Relative Spectral Sensitivity vs. Wavelength ° 0° 10 1.0 0.9 0.8 0.7 ...

Page 5

... Package Dimensions in mm Document Number 81531 Rev. 1.5, 08-Mar-05 BPW85 Vishay Semiconductors 96 12190 www.vishay.com 5 ...

Page 6

... BPW85 Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment ...

Page 7

... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...

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