VEMT2500X01 Vishay, VEMT2500X01 Datasheet

Photodetector Transistors NPN PHOTO TRANS

VEMT2500X01

Manufacturer Part Number
VEMT2500X01
Description
Photodetector Transistors NPN PHOTO TRANS
Manufacturer
Vishay
Type
Phototransistorr
Datasheet

Specifications of VEMT2500X01

Maximum Power Dissipation
100 mW
Collector- Emitter Voltage Vceo Max
20 V
Collector-emitter Breakdown Voltage
20 V
Collector-emitter Saturation Voltage
0.4 V
Maximum Operating Temperature
+ 100 C
Minimum Operating Temperature
- 40 C
Product
Phototransistor
Package / Case
Reverse Gull Wing
Wavelength
850 nm
Wavelength Typ
850nm
Power Consumption
100mW
Viewing Angle
15°
Transistor Case Style
SMD
No. Of Pins
2
Half Angle
15°
Breakdown Voltage Vbr
20V
Dark Current
1nA
Rohs Compliant
Yes
Svhc
No SVHC (20-Jun-2011)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
DESCRIPTION
VEMT2500X01 series are silicon NPN epitaxial planar
phototransistors in a miniature dome lens, clear epoxy
package for surface mounting. The device is sensitive to
visible and near infrared radiation.
Note
• Test condition see table “Basic Characteristics”
Note
• MOQ: minimum order quantity
Document Number: 81134
Rev. 1.1, 21-Feb-11
16758-10
PRODUCT SUMMARY
COMPONENT
VEMT2500X01
VEMT2520X01
ORDERING INFORMATION
ORDERING CODE
VEMT2500X01
VEMT2520X01
ABSOLUTE MAXIMUM RATINGS (T
PARAMETER
Collector emitter voltage
Emitter collector voltage
Collector current
Power power dissipation
Junction temperature
Operating temperature range
VEMT2520X01
For technical questions, contact:
Silicon NPN Phototransistor
VEMT2500X01
Tape and reel
Tape and reel
PACKAGING
I
ca
amb
(mA)
6
6
= 25 °C, unless otherwise specified)
TEST CONDITION
T
amb
 75 °C
detectortechsupport@vishay.com
MOQ: 6000 pcs, 6000 pcs/reel
MOQ: 6000 pcs, 6000 pcs/reel
FEATURES
• Package type: surface mount
• Package form: GW, RGW
• Dimensions (L x W x H in mm): 2.3 x 2.3 x 2.8
• AEC-Q101 qualified
• High radiant sensitivity
• Suitable for visible and near infrared radiation
• Fast response times
• Angle of half sensitivity:  = ± 15°
• Package matched with IR emitter series
• Floor life: 4 weeks, MSL 2a, acc. J-STD-020
• Lead (Pb)-free reflow soldering
• Compliant to RoHS Directive 2002/95/EC and in
• Halogen-free according to IEC 61249-2-21 definition
APPLICATIONS
• Detector in automotive applications
• Photo interrupters
• Miniature switches
• Counters
• Encoders
• Position sensors
VSMB2000X01
accordance to WEEE 2002/96/EC
VEMT2500X01, VEMT2520X01
REMARKS
 (deg)
± 15
± 15
SYMBOL
Vishay Semiconductors
V
V
T
P
CEO
ECO
amb
I
T
C
V
j
- 40 to + 100
PACKAGE FORM
VALUE
Reverse gullwing
100
100
20
50
470 to 1090
470 to 1090
7
Gullwing
0.1
(nm)
www.vishay.com
UNIT
mW
mA
°C
°C
V
V
1

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VEMT2500X01 Summary of contents

Page 1

... Silicon NPN Phototransistor VEMT2520X01 16758-10 DESCRIPTION VEMT2500X01 series are silicon NPN epitaxial planar phototransistors in a miniature dome lens, clear epoxy package for surface mounting. The device is sensitive to visible and near infrared radiation. PRODUCT SUMMARY COMPONENT VEMT2500X01 VEMT2520X01 Note • Test condition see table “Basic Characteristics” ...

Page 2

... VEMT2500X01, VEMT2520X01 Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS (T PARAMETER Storage temperature range Soldering temperature Thermal resistance junction/ambient 120 100 250 K/W thJA Ambient Temperature (°C) 21619 amb Fig Power Dissipation Limit vs. Ambient Temperature BASIC CHARACTERISTICS (T PARAMETER Collector emitter breakdown voltage Collector dark current ...

Page 3

... I - Collector Current (µA) C Fig Rise/Fall Time vs. Collector Current Document Number: 81134 For technical questions, contact: Rev. 1.1, 21-Feb-11 VEMT2500X01, VEMT2520X01 Silicon NPN Phototransistor = 25 °C, unless otherwise specified 100 21555 Fig Relative Spectral Sensitivity vs. Wavelength = ...

Page 4

... Time (s) Fig Lead (Pb)-free Reflow Solder Profile acc. J-STD-020 PACKAGE DIMENSIONS VEMT2500X01 in millimeters Collector 1.7 Drawing-No.: 6.544-5391.01-4 Issue: 1; 26.09.08 21570 www.vishay.com For technical questions, contact: 4 Silicon NPN Phototransistor DRYPACK ...

Page 5

... Collector Solder pad proposal acc. IPC 7351 Drawing-No.: 6.544-5383.01-4 Issue: 4; 28.01.09 21569 Document Number: 81134 For technical questions, contact: Rev. 1.1, 21-Feb-11 VEMT2500X01, VEMT2520X01 Silicon NPN Phototransistor 2.2 4.2 ± 0.2 Exposed copper 2.3 ± 0.2 Pin ID Emitter 2.45 5.15 detectortechsupport@vishay ...

Page 6

... VEMT2500X01, VEMT2520X01 Vishay Semiconductors TAPE AND REEL DIMENSIONS VEMT2500X01 in millimeters Reel 12.4 ± 1.5 Leader and trailer tape: Empty (160 mm min.) Terminal position in tape Devicce Lead I Lead II VEMT2000 Collector Emitter VEMT2500 VEMD2000 VEMD2500 Cathode Anode VSMB2000 VSMG2000 VSMY2850RG Anode Cathode Drawing-No.: 9.800-5100.01-4 Issue: 2 ...

Page 7

... VEMD2520 VSMY2850G Anode Cathode Drawing-No.: 9.800-5091.01-4 Issue: 3; 18.03.09 21571 Document Number: 81134 For technical questions, contact: Rev. 1.1, 21-Feb-11 VEMT2500X01, VEMT2520X01 Silicon NPN Phototransistor Unreel direction Label posted here Parts mounted Direction of pulling out Empty (400 mm min.) Ø 1.55 ± 0. 2:1 3.05 ± ...

Page 8

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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